Electro Scientific Industries, Inc.

Applied Materials, Inc.

Peter Pirogovsky

James N O'Brien

Asher Klatchko

Leo Benedict Baldwin

Mark Alan Unrath

Jeffrey A Albelo

Richard E Crandall

Samuel C Howells

Robin Lynn Teitzel

Yasu Osako

Jerry Martyniuk

Matthew J Jolley

Thomas E Chabreck

John Hubbard

H Christopher Hamaker

Jeffery A Albelo

Robert J Beauchaine

Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.

Ultrashort laser pulse wafer scribing

Laser machining fired ceramic and other hard and/or thick materials includes scribing a workpiece with a laser beam along a sequence of parallel laser paths within a cutout region of the workpiece. The scribing creates a kerf in the cutout region that widens as the laser beam advances along the sequence. The sequence may begin with an inner portion of the cutout region and end with an outer edge thereof such that debris is directed away from the laser paths to increase throughput and create a high quality opening in the workpiece. High quality structures may also be cut out from the workpiece. The method includes directing a high velocity stream of gas to an interlace of the laser beam and the workpiece to redirect the flow of debris and cool the interface. The method may also adjust a focus depth of the laser beam as it deepens the kerf.

Laser machining of fired ceramic and other hard and/or thick materials

A laser processing system quickly and flexibly modifies a processing beam to determine and implement an improved or optimum beam profile for a particular application (or a subset of the application). The system reduces the sensitivity of beam shaping subsystems to variations in the laser processing system, including those due to manufacturing tolerances, thermal drift, variations in component performance, and other sources of system variation. Certain embodiments also manipulate lower quality laser beams (higher Mvalues) to provide acceptable shaped beam profiles.

Adaptive optic beamshaping in laser processing systems

An improved method for singulation of compound electronic devices is presented. Compound electronic devices are manufactured by combining two or more substrates into an assembly containing multiple devices. Presented are methods for singulation of compound electronic devices using laser processing. The methods presented provide fewer defects such as cracking or chipping of the substrates while minimizing the width of the kerf and maintaining system throughput.

Method for laser singulation of chip scale packages on glass substrates

Laser machining fired ceramic and other hard and/or thick materials includes scribing a workpiece with a laser beam along a sequence of parallel laser paths within a cutout region of the workpiece. The scribing creates a kerf in the cutout region that widens as the laser beam advances along the sequence. The sequence may begin with an inner portion of the cutout region and end with an outer edge thereof such that debris is directed away from the laser paths to increase throughput and create a high quality opening in the workpiece. High quality structures may also be cut out from the workpiece. The method includes directing a high velocity stream of gas to an interface of the laser beam and the workpiece to redirect the flow of debris and cool the interface. The method may also adjust a focus depth of the laser beam as it deepens the kerf.

Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for 'post-rasterization' by manipulating the grayscale values of pixel maps.

Optical proximity correction in raster scan printing based on corner matching templates

Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via photolithography are provided. Such defects are compensated for 'post-rasterization' by manipulating the grayscale values of pixel maps.

Optical proximity correction in raster scan printing based on grayscale manipulation of the bitmap

Systems and methods for gray scale lithography for defining edges such as on microelectronic device patterns during integrated circuit fabrication are disclosed. Methods for critical dimension edge placement and slope enhancement utilize central pixel dose addition or modulated inner pixels. A method for gray scale lithography for defining edges of features generally comprises identifying a center pixel of a feature, exposing the general width of the feature including the identified center pixel with full doses, and enhancing the identified center pixel by exposing the identified center pixel with additional dose to accurately place the edge of the feature, whereby the edge of the feature is defined and moved by exposing the center pixel with the additional dose. Another method for gray scale lithography generally comprises identifying a proximal interior pixel immediately interior to an unbiased edge of the feature, exposing the general width of the feature full dosages, and exposing the proximal interior pixel with a dosage of elevated intensity selected from a set of gray levels, the elevated intensities being above the full dosage, the set of gray levels biases the edge of the feature and facilitates in further moving the edge of the feature in fractional increments of a pixel depending upon the gray level selected.

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Portland, OR, United States of America

Peter Pirogovsky