Universal Energy Systems, Inc.

Peter P Pronko

Rabi S Bhattacharya

Amarendra K Rai

Charbel Raffoul

Richard L Wu

A method of depositing a diamondlike carbon coating on a substrate. An ionized beam of pure methane or methane and hydrogen, and having an ion kinetic energy in the range of 500-1,000 eV is impinged on a substrate to deposit, thereon, a diamondlike carbon coating. Various substrates can be utilized, and various cleaning procedures are developed for use with the particular substrates to improve the adhesion of the diamondlike carbon coatings. The methane-hydrogen ratio and the operating pressure of the ionized gas can each be varied to vary the carbon-hydrogen ratio of the resulting diamondlike coating to thereby alter the characteristics of the coating.

Method for forming diamondlike carbon coating

A silicon on insulator structure and method of making the structure. A high purity, substantially defect free silicon wafer is the basis for forming a final thin silicon layer on an insulator layer, the silicon having substantially the same chemical and structural state as the starting silicon wafer. Dopant atoms of MeV energy range are implanted into the silicon wafer, the silicon wafer having an insulator layer coupled thereto; and an underlying silicon carrier wafer is coupled to the insulator. The implanted silicon wafer undergoes preferential etch stop removal of the silicon up to the implanted dopant layer, followed by selective removal of the dopant atom layer, leaving the desired high quality silicon layer on an insulator substrate.

High energy ion implanted silicon on insulator structure

A silicon on insulator structure and method of making the structure. A high purity, substantially defect free silicon wafer is the basis for forming a final thin silicon layer on an insulator layer, the silicon having substantially the same chemical and structural state as the starting silicon wafer. Dopant atoms of MeV energy range are implanted into the silicon wafer, the silicon wafer haivng an insulator layer coupled thereto; and an underlying silicon carrier wafer is coupled to the insulator. The implanted silicon wafer undergoes preferential etch stop removal of the silicon up to the implanted dopant layer, followed by selective removal of the dopant atom layer, leaving the desired high quality silicon layer on an insulator substrate.

A method of providing corrosion resistant substrates having an amorphous metallic alloy coating thereon. The method comprises depositing refractory and transition elements, such as Ni, Nb, Ti and Cr, onto the substrate to provide a crystalline metallic layer thereon which is then irradiated to convert the layer into an amorphous metallic coating on the substrate. The coated substrate displays a corrosion resistance which is at least about four orders of magnitude greater than for the uncoated substrate in both lN HNO.sub.3 and 0.1 N NaCl aqueous solutions.

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Kettering, OH, United States of America

Peter P Pronko