Sigma-aldrich Co. LLC

Merck Patent Gmbh

Peter Nicholas Heys

Rajesh Odedra

Fuquan Song

Paul Williams

Hywel Owen Davies

Andrew Kingsley

Thomas Leese

Paul Chalker

Sarah Louise Hindley

Paul Raymond Chalker

Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is &#x2014;NRR; Rand Rare C-C-alkyl or hydrogen; R is C-C-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoOfilms by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]are disclosed herein. 

Molybdenum (IV) amide precursors and use thereof in atomic layer deposition

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein:

Methods of atomic layer deposition using titanium-based precursors

Methods are provided to form and stabilize high-&#x3ba; dielectric films by chemical phase deposition processes using metal-source precursors and cerium-based &#x3b2;-diketonate precursors according to Formula I: Ce(L)x (Formula I) wherein: L is a &#x3b2;-diketonate; and x is 3 or 4. Further provided are methods of improving high-&#x3ba; gate property of semiconductor devices by using cerium precursors according to Formula I. High-&#x3ba; dielectric films are also provided comprising hafnium oxide, titanium oxide or mixtures thereof, and further containing a permittivity maintaining or increasing amount of cerium atoms.

Methods of producing high-K dielectric films using cerium-based precursors

Precursors suitable for chemical vapor deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula:(RCp)MRwherein Cp represents a cyclopentadienyl ligand, Ris H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, Ris an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.

Use of cyclopentadienyl type hafnium and zirconium precursors in atomic layer deposition

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: 

Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C-C-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C-C-alkyl.

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Crewe, United Kingdom

Peter Nicholas Heys