Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Peter Nagel

Stefan Illek

Klaus Reingruber

Patrick Rode

Andreas Ploessl

Lutz Hoeppel

Tobias Gebuhr

Dominik Scholz

Martin Strassburg

Juergen Moosburger

Konrad Wagner

Simone Brantl

Ralf Müller

A method of embedding opto-electronic components in a layer, wherein the components are disposed beside one another to be spaced apart on a carrier, including providing a molding tool having a bearing plate, wherein the bearing plate on a lower side includes resilient bearing regions, bringing the bearing plate by way of the resilient bearing regions to bear on upper sides of the components, filling an intermediate space between the components, the carrier, and the bearing plate with a molding material, curing the molding material to form the layer, and removing the molding tool from the layer and the embedded components.

Method of embedding opto-electronic components in a layer

An optoelectronic component includes a carrier, an optoelectronic arrangement, and a potting material, wherein the optoelectronic arrangement includes an optoelectronic semiconductor chip, the optoelectronic arrangement is arranged above a top side of the carrier, the potting material is arranged above the top side of the carrier such that the optoelectronic arrangement is embedded into the potting material, a radiation emission face of the optoelectronic arrangement is not covered by the potting material, and a surface of the potting material is formed above the radiation emission face in relation to the top side of the carrier.

Optoelectronic component and method of producing an optoelectronic component

An optoelectronic component includes a carrier including a mounting face, wherein at least one optoelectronic semiconductor chip configured to emit electromagnetic radiation is arranged above the mounting face, a molding material is arranged above the mounting face, the optoelectronic semiconductor chips are embedded into the molding material, a cavity is formed in the molding material, the cavity is empty, radiation emission faces of the optoelectronic semiconductor chips are not covered by the molding material, the cavity is accessible through an opening in the molding material, and an opening face of the opening is smaller than a sum of all radiation emission faces of the optoelectronic semiconductor chips.

A method of producing a lighting device includes a radiation-emitting optoelectronic component, including: arranging the component on a carrier, applying a first layer on the carrier, wherein the first layer surrounds the component at least laterally in the form of a circumferential frame, and subsequently applying a second layer on the first layer laterally next to the frame, wherein the second layer includes a greater hardness than the first layer.

Method of producing a lighting device

An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein the diodes have electrical connections, the electrical connections are led to contact areas, and the contact areas are arranged on an underside of the first carrier; and a second carrier, wherein further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and fixedly connects to the second carrier, and an electronic circuit for open-loop and/or closed-loop control of the power supply of the diodes is integrated in the second carrier.

Optoelectronic component with protective circuit

A method for producing a plurality of optoelectronic semiconductor components () is provided, comprising the following steps: a) providing an auxiliary carrier (); b) providing a plurality of semiconductor chips (), wherein each of the semiconductor chips has a carrier body () and a semiconductor body () arranged on an upper side () of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (); f) removing the auxiliary carrier (); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components ().

Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

An optoelectronic device () having a semiconductor layer structure () comprising a first light-active layer () and a second light-active layer (). A first tunnel junction () is formed between the first light-active layer () and the second light-active layer (). A first Bragg reflector () is formed between the first light-active layer () and the first tunnel junction (). A second Bragg reflector () is formed between the second light-active layer () and the first tunnel junction ().

Optoelectronic component and method for the production thereof

An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein each diode has two electrical connections, each electrical connection is led to a contact area, the contact areas are arranged on an underside of the first carrier, and a second carrier, wherein at least two zener diodes are arranged in the second carrier, the zener diodes have further electrical connections, each further electrical connection is led to a further contact area, the further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and is fixedly connected to the second carrier, and the zener diodes antiparallelly connect to the diodes.

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Wuppertal, Germany

Peter Nagel