Asm International N.v.

Asm IP Holding B.v.

Peter Marc Zagwijn

Suvi P Haukka

Jan Willem Maes

Qi Xie

Dieter Pierreux

Bert Jongbloed

Werner Knaepen

Hessel Sprey

Theodorus Gerardus Maria Oosterlaken

Steven R A Van Aerde

Cornelius A Van Der Jeugd

Hyung-Sang Park

Robin Roelofs

Tanja Claasen

Marinus Josephus De Blank

Stijn De Vusser

Pamela René Fischer

A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

Cyclic aluminum nitride deposition in a batch reactor

An atomic layer deposition-deposited silicon dioxide/metal oxide-nanolaminate, comprising at least one layer of silicon dioxide and at least one layer of a metal oxide, and having a wet etch rate in an etchant, said wet etch rate being either greater or smaller than both a wet etch rate of a film of silicon dioxide and a wet etch rate of a film of said metal oxide in said etchant. Also provided is a method for manufacturing the same.

Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate

A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be flowed into the process chamber with the flow of the dopant precursor or separately from the flow of the dopant precursor. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.

Low temperature doped silicon layer formation

Methods are provided for pulsed chemical vapor deposition (CVD) of complex nitrides, such as ternary metal nitrides. Pulses of metal halide precursors are separated from one another and nitrogen-containing precursor is provided during the metal halide precursor pulses as well as between the metal halide precursor pulses. Two different metal halide precursors can be provided in simultaneous pulses, alternatingly, or in a variety of sequences. The nitrogen-containing precursor, such as ammonia, can be provided in pulses simultaneously with the metal halide precursors and between the metal halide precursors, or continuously throughout the deposition. Temperatures can be kept between about 300&#xb0; C. and about 700&#xb0; C.

Deposition of complex nitride films

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Nijkerk, Netherlands

Peter Marc Zagwijn