Globalfoundries Inc.

Peter M Zeitzoff

Steven J Bentley

Mark V Raymond

Puneet Harischandra Suvarna

Abhijeet Paul

Embodiments of the disclosure provide integrated circuit (IC) structures with stepped epitaxial regions and methods of forming the same. A method according to the disclosure can include: removing a portion of a substrate to form a recess therein, the portion of the substrate being laterally adjacent to a semiconductor fin having a sidewall spacer thereon, to expose an underlying sidewall of the semiconductor fin; forming an epitaxial layer within the recess, such that the epitaxial layer laterally abuts the sidewall of the semiconductor fin below the sidewall spacer; removing a portion of the epitaxial layer to form a stepped epitaxial region adjacent to the semiconductor fin, the stepped epitaxial region including a first region laterally abutting the sidewall of the semiconductor fin, and a second region laterally adjacent to the first region; and forming a gate structure over the stepped epitaxial region and adjacent to the semiconductor fin.

Integrated circuit structure with stepped epitaxial region

Integrated circuits and methods for fabricating integrated circuits are provided. In accordance with an exemplary embodiment, an integrated circuit includes a semiconductor substrate with a fin structure overlying the semiconductor substrate and having a source region, a drain region, and a channel region between the source region and drain region. The source region and the drain region each have a recessed surface. A source contact is adjacent the recessed surface in the source region and a drain contact is adjacent the recessed surface in the drain region. Linear current paths are defined from the channel region to the source contact and from the channel region to the drain contact.

Growing community of inventors

Clifton Park, NY, United States of America

Peter M Zeitzoff