International Business Machines Corporation

Peter M Fryer

Gareth Geoffrey Hougham

Evan G Colgan

Ronald Wayne Nunes

John Batey

Jun Hyung Souk

Robert L Wisnieff

Mary Elizabeth Rothwell

Paul Stephen Andry

Stephen L Buchwalter

Takatoshi Tsujimura

Kang-Wook Lee

Mary Beth Rothwell

John J Ritsko

Tricia Lynn Breen

John Christopher Flake

Kenneth Parker Rodbell

Eugene John O'Sullivan

Frank Robert Libsch

James M Harper

William S Graham

The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodesanddisposed at a specified interval above an insulating substrateand formed by printing-and-plating; an a-Si filmdisposed for the source and drain electrodesand; a gate insulating filmlaminated on the a-Si film; and a gate electrodelaminated on the gate insulating filmand formed by printing-and-plating. The a-Si filmand the gate insulating filmhave an offset regionthat uniformly extends beyond the dimensions of the gate electrode

Thin film transistor and multilayer film structure and manufacturing method of same

New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.

Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displays

A process of making a microcontact printing stamp useful in the microcontact printing of a microcircuit. In this process an elastomeric microcontact printing stamp is formed by curing a degassed liquid elastomeric monomer or oligomer, optionally saturated with helium, a mixture of helium and an inert gas or a mixture of hydrogen and an inert gas, in a mold in which a photoresist master, defining a microcircuit in negative relief, is predisposed above a backplane.

Process of fabricating a precision microcontact printing stamp

The process of derivatization and patterning of surfaces, and more particularly to the formation of self-assembled molecular monolayers on metal oxide surfaces using microcontact printing and the derivative articles produced thereby.

Method of forming patterned nickel and doped nickel films via microcontact printing and uses thereof

The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes and disposed at a specified interval above an insulating substrate and formed by printing-and-plating; an a-Si-film disposed for the source and drain electrodes and ; a gate insulating film laminated on the a-Si film ; and a gate electrode 18 laminated on the gate insulating film and formed by printing-and-plating. The a-Si film and the gate insulating film have an offset region that uniformly extends beyond the dimensions of the gate electrode

A process of making a high precision microcontact printing stamp in which an elastomeric monomer or oligomer is introduced into a mold wherein a photoresist master imprinted with a microcircuit design in negative relief is predisposed. The monomer or oligomer is cured at a temperature no higher than about ambient temperature whereby a distortion-free microcontact printing stamp having the microcircuit design of the photoresist master in positive relief is formed.

An active matrix organic light-emitting diode comprising an organic light-emitting diode portion. The organic light-emitting diode portion comprising: an underlayer having a top surface and bottom surface; a first electrode layer which is deposited and patterned on the top surface of the underlayer such that at least a portion of the underlayer is exposed, wherein the deposited first electrode layer comprises a top surface, a bottom surface and sidewalls disposed between the top and bottom surfaces, the sidewalls are positioned adjacent to the exposed portion of the underlayer; a passivation layer deposited on the exposed portion of the underlayer and the peripheral regions of the first electrode layer such that the passivation layer covers the sidewalls and the peripheral regions of the first electrode layer; a transparent conductor layer deposited on the passivation layer and the non-peripheral regions of the first electrode layer; and a second electrode layer deposited on the transparent conductor layer.

Yield enchancement pixel structure for active matrix organic light-emitting diode displays

A process of making a microcontact printing stamp useful in microcontact printing of microcircuits. In this process an elastomeric microcontact printing stamp is formed by curing an elastomeric monomer or oligomer in a mold in which a photoresist master, defining a microcircuit in negative relief, is predisposed above a flat and rigid backplane laminate. The flat and rigid plane member of the backplane laminate is delaminated from the backplane after the printing stamp is removed from the mold.

A method for forming ohmic contacts for semiconductor devices, in accordance with the present invention, includes forming a layer containing metal which includes dopants integrally formed therein. The layer containing metal is patterned to form components for a semiconductor device, and a semiconductor layer is deposited for contacting the layer containing metal. The semiconductor device is annealed to outdiffuse dopants from the layer containing metal into the semiconductor layer to form ohmic contacts therebetween.

Method of forming ohmic contacts using a self doping layer for thin-film transistors

A thin film transistor and a liquid crystal display panel are provided. These devices include a layer of ammonia-free silicon nitride formed between the gate and the gate insulator of the device.

Transistor having ammonia free nitride between its gate electrode and gate insulation layers

A method for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display and a method of constructing the same, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper,aluminum, or other refractory metal gate and the gate insulator. Further,. the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The layer is made in a plasma-enhanced chemical vapor deposition process wherein the gas mixture comprises one part silane to 135 parts nitrogen to 100 parts helium and 100 parts hydrogen. A structure, and a process for forming the structure, for providing stable and low-resistance electrical contact between copper,aluminum, or another refractory metal gate lines and a metallization layer of aluminum and/or molybdenum, includes using a conductive material, such as an indium tin oxide bridge. Prior to depositing the metallization layer, the copper,aluminum, or other refractory metal which extends over a portion of the conductive material, and a portion of the conductive material not covered by the copper,aluminum, or other refractory metal are passivated with a layer of the ammonia-free silicon nitride. The metallization layer is then connected to the conductive material through a via hole extending to that portion of the conductive material which is not covered by the copper, aluminum, or another refractory metal.

Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD

Microcontact printing to pattern a self-assembled monolayer (SAM) of an alkanephosphonic acid on a film of indium zinc oxide (IZO). The SAM is robust enough to protect the undelying IZO from wet chemical etching, and thus defines a pattern of IZO on the substrate. In the microcontact printing process, a patterned, elastomeric stamp is inked with a solution of octadecylphosphonic acid and brought into conformal contact with the IZO surface. A SAM of alkanesulfonic acid forms where the stamp and the surface make contact; the rest remains underivatized. The stamp is then removed from the surface. Etching the sample in aqueous oxalic acid removes the unprotected areas, while the areas protected by the SAM remain in place.

Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof

A method for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display and a method of constructing the same, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper, aluminum, or other refractory metal gate and the gate insulator. Further, the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The layer is made in a plasma-enhanced chemical vapor deposition process wherein the gas mixture comprises one part silane to 135 parts nitrogen to 100 parts helium and 100 parts hydrogen. A structure, and a process for forming the structure, for providing stable and low-resistance electrical contact between copper, aluminum, or another refractory metal gate lines and a metallization layer of aluminum and/or molybdenum, includes using a conductive material, such as an indium tin oxide bridge. Prior to depositing the metallization layer, the copper, aluminum, or other refractory metal which extends over a portion of the conductive material, and a portion of the conductive material not covered by the copper, aluminum, or other refractory metal are passivated with a layer of the ammonia-free silicon nitride. The metallization layer is then connected to the conductive material through a via hole extending to that portion of the conductive material which is not covered by the copper, aluminum, or another refractory metal.

Passivation of copper with ammonia-free silicon nitride and application

A multi-layer metal sandwich structure with taper and reduced etch bias formed on a substrate includes a first metal layer formed on the substrate and a second metal layer formed on the first metal layer. The width of the first metal layer is greater than the width of the second metal layer at the interface of the first metal layer and the second metal layer. The second metal layer has tapered side walls. The taper angle between each side wall and the intersection of the first and second metal layers is between 5.degree. and 90.degree.. The multi-layer metal sandwich may also include a third metal layer formed on the second metal layer.

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Yorktown Heights, NY, United States of America

Peter M Fryer