Tokyo Electron Limited

Peter Lowell George Ventzek

Alok Ranjan

Jianping Zhao

Shyam Sridhar

Mitsunori Ohata

Barton Lane

Zhiying Chen

Yun Han

John L Carroll

Ya-Ming Chen

Charles Schlechte

Toshihiko Iwao

Qiang Wang

Shinya Morikita

Michael Hummel

Roberto C Longo Pazos

Kensuke Taniguchi

An apparatus for plasma processing includes a pedestal configured to support a substrate and a conductive structure disposed at the pedestal. The conductive structure is configured to generate a plasma localized at an edge region of the substrate. The conductive structure may be a resonant structure. The apparatus may include a focus ring that has an insulating material with an annular shape defining an interior opening. The conductive structure may be embedded within the insulating material and be configured to generate the plasma along the annular shape and surrounding the interior opening. Processing conditions at the edge region of the substrate may be controlled using the plasma localized at the edge region.

Apparatus for edge control during plasma processing

A method of characterizing a plasma in a plasma processing chamber that includes: sustaining a plasma generated from a process gas in a plasma processing chamber; flowing a probe gas through the plasma processing chamber; obtaining spatially-resolved OES signals at a wavelength of an optical emission line of the probe gas within the plasma processing chamber, signal intensities of the spatially-resolved OES signals being correlated to a plasma parameter of the plasma, the plasma parameter having a spatial distribution within the plasma processing chamber; and based on the spatially-resolved OES signals, constructing a 3D map of OES signals by data fitting of the spatially-resolved OES signals with a computation model; and converting the 3D map of OES signals into a 3D map of the plasma parameter, the 3D map of the plasma parameter including information about the spatial distribution.

Non-intrusive method for 2D/3D mapping plasma parameters

A plasma processing apparatus includes a plasma processing chamber, a source power coupling element configured to generate plasma in an interior of the plasma processing chamber by coupling source power to the plasma processing chamber, a DC pulse generator configured to generate a DC pulse train at a DC pulse frequency, a substrate holder disposed in the interior of the plasma processing chamber, a DC coupling element coupled to the DC pulse generator, a DC current path including the DC coupling element, the plasma, and a reference potential node in a series configuration, the DC coupling element being configured to bias the substrate holder relative to the reference potential node using the DC pulse train, and a capacitive pre-coat layer disposed between the DC coupling element and the plasma. The capacitive pre-coat layer increases the RC time constant of the DC current path according to the DC pulse frequency.

Plasma processing apparatus with tunable electrical characteristic

A plasma etching system that includes a plasma processing chamber, a substrate holder disposed in the plasma processing chamber, a RF power source configured to generate a plasma in the plasma processing chamber, a first magnet disposed above the substrate holder, the first magnet configured to apply, in the plasma processing chamber, an azimuthally symmetric magnetic field that is independent from a magnetic field generated by the RF power source, and a second magnet disposed below the substrate holder and configured to modify the azimuthally symmetric magnetic field and create a ring X point between the first magnet and the second magnet, where positions of the first magnet and the second magnet are arranged such that the ring X point is located nearer to an edge of the substrate holder than a center of the substrate holder.

Plasma processing with magnetic ring X point

A method of plasma processing includes cyclically performing a cycle including the steps of performing a glow phase and performing an afterglow phase. The glow phase includes providing a first SP pulse comprising a first SP power level for a first duration to an SP electrode to generate a capacitively coupled plasma in a plasma processing chamber. The first SP pulse terminates at the end of the glow phase. The afterglow phase is performed after the glow phase and includes providing a BP pulse train to a BP electrode coupled to a target substrate within the plasma processing chamber in an afterglow of the capacitively coupled plasma for a second duration between about 10 μs and about 100 μs. The BP pulse train includes a plurality of BP spikes. Each of the plurality of BP spikes is a DC pulse that has a first BP power level.

Pulsed capacitively coupled plasma processes

According to an embodiment, a plasma processing system includes a plasma chamber, an RF source, a matching circuit, a balun, and a resonating antenna. The resonating antenna includes a first and a second spiral resonant antenna (SRA), each having an electrical length corresponding to a quarter of a wavelength of a frequency of a forward RF wave generated by the RF source. The first end of the first SRA is coupled to a first balanced terminal of the balun and the second end of the first SRA is open circuit. The first end of the second SRA is coupled to a second balanced terminal of the balun and the second end of the second SRA is open circuit. The first and the second SRA are arranged in a symmetrically nested configuration having a same center point.

Balanced RF resonant antenna system

A method of processing a substrate that includes: in a plasma processing chamber, performing an atomic layer deposition (ALD) process including cycles of deposition while maintaining a temperature of a substrate support between 25° C. and 450° C., one of the cycles including exposing the substrate loaded in a plasma processing chamber to a first precursor to modify a surface of the substrate with the first precursor, after exposing the substrate, purging the plasma processing chamber with an inert gas, exposing the modified surface of the substrate to a first plasma generated from the inert gas, and flowing a second precursor into the plasma processing chamber, after exposing to the first plasma, to form a conformal layer from the modified surface.

ALD process with plasma treatment

A plasma system includes a plasma apparatus comprising a plasma chamber and a substrate support disposed in the plasma chamber. The system includes an electromagnetic (EM) circuit block coupled to a radio frequency (RF) electrode. The EM circuit block includes a broadband RF waveform function generator, the broadband RF waveform having EM power distributed over a range of frequencies, and a broadband impedance matching network having an input coupled to an output of the broadband RF waveform function generator and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies. The system includes a controller programmed to adjust an input parameter of the EM circuit block.

Plasma processing with broadband RF waveforms

A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate including an underlying layer; maintaining a steady state flow of a process gas into the plasma processing chamber in the plasma processing chamber; generating a plasma in the plasma processing chamber; exposing the substrate to the plasma to etch the underlying layer; and pulsing a first additional gas, using a first effusive gas injector, towards a first region of the substrate to disrupt the steady state flow of the process gas over the first region, the pulsing locally changing a composition of the plasma near the first region.

Method of uniformity control

A method of processing a substrate that includes: flowing a gas including a fluorocarbon to a plasma processing chamber; sustaining a plasma generated from the gas; depositing a carbonaceous layer over the substrate by exposing the substrate to the plasma, the substrate having a recess having an aspect ratio between 10:1 and 100:1, the depositing including a pulsed plasma process including: during a first time duration, setting a source power (SP) at a first SP level and a bias power (BP) at a first BP level, where the plasma includes fluorocarbon ions polymerizing on a bottom surface to form the carbonaceous layer, and during a second time duration, setting the SP at a second SP level higher than the first SP level and the BP at a second BP level lower than the first BP level, where the plasma includes fluorine radicals trimming the carbonaceous layer.

Topographic selective deposition

A plasma processing method includes generating a plasma within a processing chamber using source power to ignite a glow phase of the plasma, generating low-energy ions at a substrate supported by a substrate holder in the processing chamber from the plasma using lower-frequency radio frequency bias power applied during the glow phase, and generating high-energy ions at the substrate using higher-frequency radio frequency bias power applied during an afterglow phase of the plasma. The frequency of the higher-frequency radio frequency bias power is greater than the frequency of the lower-frequency radio frequency bias power.

Plasma processing methods using multiphase multifrequency bias pulses

A method of etching a substrate that includes: generating a first plasma from a first gas flowing into a first chamber by applying a first power pulse to a first electrode located in the first chamber over a first time duration; and forming a recess in a substrate located in a second chamber, the forming including: providing radicals from the first chamber into the second chamber; applying a plurality of second power pulses to a second electrode located in the second chamber during a second time duration to generate a second plasma in the second chamber from a second gas flowing into the second chamber, the first chamber being pressurized higher than the second chamber; and applying a plurality of third power pulses to a third electrode located in the second chamber during a third time duration to accelerate ions of the second plasma.

Remote source pulsing with advanced pulse control

A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: directing an energy flux to a localized region of an unreactive surface of a substrate to convert the localized region of the unreactive surface to a localized reactive region: and selectively nitridating the localized reactive region using a nitrogen-based gas to convert the localized reactive region to a nitride layer.

Cyclic low temperature film growth processes

A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.

A method for plasma processing includes: sustaining a plasma in a plasma processing chamber, the plasma processing chamber including a first radio frequency (RF) electrode and a second RF electrode, where sustaining the plasma includes: coupling an RF source signal to the first RF electrode; and coupling a bias signal between the first RF electrode and the second RF electrode, the bias signal having a bipolar DC (B-DC) waveform including a plurality of B-DC pulses, each of the B-DC pulses including: a negative bias duration during which the pulse has negative polarity relative to a reference potential, a positive bias duration during which the pulse has positive polarity relative to the reference potential, and a neutral bias duration during which the pulse has neutral polarity relative to the reference potential.

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Austin, TX, United States of America

Peter Lowell George Ventzek