Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Guardian Corp.

Sige Semiconductor, Inc.

Other

At+t Corp.

Resonance Semiconductor Corporation

Cymatics Laboratories Corp.

Peter Ledel Gammel

Bradley Paul Barber

David John Bishop

Vladimir Anatolyevich Aksyuk

Hugo Fernando Safar

Yiu-Huen Wong

Marco Mastrapasqua

Isik C Kizilyalli

C Randy Giles

Wei Zhu

Muhammed Ayman Shibib

Shuming Xu

Richard E Howard

Omar Daniel Lopez

Rajarishi Sinha

Darcy Poulin

Zhijian Xie

Karl Georg Hampel

Juan Alejandro Herbsommer

Nicholas J Frigo

James Albert Walker

Paul Robert Kolodner

Grant Darcy Poulin

John Edwin Graebner

Bailey R Jones

Philip Moss Platzman

Rafael Nathan Kleiman

Nathan R Belk

Harold Alexis Huggins

Victor M Lubecke

Eric D Isaacs

LaRue Norman Dunkleberger

Matthew A Marcus

A transceiver circuit is configured to operate in a first mode of operation and a second mode of operation such that a receive signal propagates from an antenna through a first filter to a low noise amplifier while simultaneously a transmit signal propagates from a power amplifier through a second filter to the antenna when operating in the first mode. The receive signal propagates from the antenna to the low noise amplifier without being filtered while alternating with the transmit signal propagating from the power amplifier to the antenna without being filtered when operating in the second mode.

Systems and methods of operational modes for a transceiver

The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Integrated acoustic bandgap devices for energy confinement and methods of fabricating same

A circuit is disclosed with an external coupling port for coupling to an external antenna, for example. The circuit has an FDD receive path including a narrowband passband filter. The circuit has a TDD receive path bypassing the narrowband passband filter but relying on a same amplifier. The circuit also has an FDD transmit path including a narrowband passband filter. The circuit has a TDD transmit path bypassing the narrowband passband filter of the FDD transmit path but relying on a same transmit amplifier. A switching configuration allows the circuit to operate in TDD mode, alternating between the TDD receive path and the TDD transmit path and in the FDD mode wherein the FDD transmit and receive paths are simultaneously coupled to the external coupling port.

Dual mode transceiver

In a metal-oxide semiconductor device including first and second source/drain regions of a first conductivity type formed in a semiconductor layer of a second conductivity type proximate an upper surface of the semiconductor layer, a drift region formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions, an insulating layer formed on at least a portion of the upper surface of the semiconductor layer, and a gate formed on the insulating layer and at least partially between the first and second source/drain regions, a method for controlling an amount of hot carrier injection degradation in the device includes the steps of: forming a shielding structure on the insulating layer above at least a portion of the drift region and substantially between the gate and the second source/drain region; and adjusting an amount of coverage of the shielding structure over an upper surface of the drift region so as to minimize the amount of hot-carrier injection degradation while maintaining a breakdown voltage in the device which is greater than or equal to a prescribed value.

Control of hot carrier injection in a metal-oxide semiconductor device

A method of making a microelectromechanical microwave vacuum tube device is disclosed. The device is formed by defining structural regions and sacrificial regions in a substrate. The structural regions have flexural members. The substrate is treated to remove the sacrificial regions and release the structural regions such that the structural regions are moveable by the flexural members. The structural regions include a device cathode, a device grid or both a device cathode and a device grid. The cathode comprises electron emitters. The device further includes an output structure where amplified microwave power is removed from the device. In the method, the cathode surface and the grid surface are moved to a position where they are substantially parallel to each other and substantially perpendicular to the substrate. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.

Process for making an on-chip vacuum tube device

The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.

Device and method using isotopically enriched silicon

An MOS device is formed including a semiconductor layer of a first conductivity type, and first and second source/drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer, the first and second source/drain regions being spaced apart relative to one another. A drift region is formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. An insulating layer is formed on at least a portion of the upper surface of the semiconductor layer and above at least a portion of the drift region. A gate is formed on the insulating layer and at least partially between the first and second source/drain regions. The MOS device further includes a shielding structure formed on the insulating layer above at least a portion of the drift region. The shielding structure is configured such that an amount of hot carrier injection degradation in the MOS device is controlled as a function of an amount of coverage of the shielding structure over an upper surface of the drift region.

A microelectromechanical microwave vacuum tube device is disclosed. The device consists of a cathode formed on a substrate, the cathode comprising electron emitters. A cathode emission control grid is also attached to the device substrate. The device further includes an output structure where amplified microwave power is removed from the device. In the device, the cathode surface and the grid surface are substantially parallel to each other and substantially perpendicular to the substrate. One of either the cathode, the grid, or both the cathode and the grid, are attached to the device substrate by one or more flexural members. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.

On-chip vacuum tube device and process for making device

The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device. The TFR device with the modified electrode structure can operate at higher power levels and has a longer operational lifetime than what is currently available.

Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom

Differing metallic electrodes having the same or differing thickness are formed at different locations on a support structure and/or on a single thickness film of piezoelectric material in order to form a multiple frequency resonator device having greatly separated acoustic resonance frequencies. A plurality of multiple frequency resonators can be combined to form a blank of frequency selective devices in order to handle the many different RF bands, at widely varying frequencies, that wireless communication technologies demand today.

Multi-frequency thin film resonators

In the thin film resonator, a piezoelectric membrane is disposed over a substrate. A first support structure defines a space over the substrate and supports the edges of the piezoelectric membrane such that the piezoelectric membrane is disposed over this space. A further support structure is disposed within the space to the piezoelectric membrane.

Structurally supported thin film resonator and method of fabrication

A method for studying vibrational modes of an electro-acoustic device includes driving the electro-acoustic device to produce at least one vibrational mode therein, collecting phase and amplitude data from the electro-acoustic device using optical interferometry, and mapping the at least one vibrational mode based upon the collected phase and amplitude data. The phase and amplitude data may be processed to provide an instantaneous three-dimensional view of the at least one vibrational mode. Furthermore, a sequence of instantaneous three-dimensional views may be constructed to form a motion picture of the at least one vibrational mode. Additionally, collecting may include raster scanning to provide phase and amplitude data across a surface of the electro-acoustic device.

Method and apparatus for studying vibrational modes of an electro-acoustic device

A process for configuring a thin film resonator to advantageously shape a desired acoustic mode of the resonator such that the electrical and acoustic performance of the resonator is enhanced. As a result of the contouring or shaping, a minimum amount of acoustic energy occurs near the edge of the resonator, from which energy may leak or at which undesired waves may be created by a desired mode. The process is used during batch-fabrication of thin-film resonators which are used in high frequency RF filtering or frequency control applications. Utilizing photolithography, the shaping can be achieved in a manner derived from the known methods used to manufacture lens arrays. Using the process, the lateral motion of acoustic waves within the resonator may be controlled and the acoustic energy of the sound wave positioned at a desired location within the resonator.

Method for shaping thin film resonators to shape acoustic modes therein

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Millburn, NJ, United States of America

Peter Ledel Gammel