The Boc Group, Inc.

Boc, Inc.

Edwards Limited

Elkem as

Trikon Equipments Limited

Peter L Timms

James Robert Smith

Mark Philip Taylor

Adrian Kiermasz

Ian Andrew Norton

Knut Beekman

Simon McClatchie

William N Rowlands

A method is described for treating a gas stream comprising fluorine (F) gas. In a preferred embodiment, the method comprises adding water vapor to a gas stream and conveying the gas stream and water vapor to a reaction chamber containing a heated bed of material to react with Fto form an inorganic fluoride while inhibiting formation of CFwithin the reaction chamber, and at least partially evacuating the reaction chamber so that the gas stream is conveyed to and from the reaction chamber at sub-atmospheric pressure.

Method of treating a gas stream

A method for treating a gas stream containing one or more perfluoro-organic compounds to remove the perfluoro-organic compound(s) therefrom, which comprises bringing the gas stream in to contact with an alkali metal fluoride in the presence of carbon and water vapor at a temperature of 350&deg; C. to 1000&deg;C.

Treatment of gas mixtures

A liquid short-chain polymer of the general formula R,Si(OH),or (R),SiH,(OH),is deposited on a substrate, where a&plus;b&equals;4 or a&plus;b&plus;c&equals;4, respectively, a, b and c are integers, R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis. The short-chain polymer is then subjected to further polymerization to form an amorphous structure of the general formula (R,SiO,),, where x and y are integers, x&plus;y&equals;4, x&ne;0, n equals 1 to &infin;, R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis.

Methods and apparatus for treating a semiconductor substrate

A process for the scrubbing of species of an element of Group 3, 4 and 5(b) of the Periodic Table from a gas stream. The process comprises contacting the gas stream with an aqueous solution of hydrofluoric acid (HF) or a solution containing the hydrogen fluoride ion HF.sub.2.sup.- and an oxidizing agent.

Processes for the scrubbing of noxious substances

A method for the treatment of a stream of exhaust gases including phosphine in which the stream is heated to a sufficiently high temperature to decompose the phosphine to phosphorus vapor and the stream is then passed into a reactor containing calcium oxide heated to above about 100.degree. C. An oxygen containing stream is also passed into the reactor.

Gas stream purification apparatus

A method treating effluent gases including exposing the gases to silicon or a silicon rich alloy or substances at an elevated temperature.

Exhaust gas conditioning

A gas treatment method and apparatus for use in connection with processes of etching semiconductor devices or of plasma enhanced chemical vapor deposition onto semiconductor materials. In accordance with the method and apparatus, the exhaust gases are introduced into first and second stages while heating the first and second stages. The stages can be contained within a heated cartridge. The first stage contains silicon or a silicon-rich alloy or a silicon-rich substance in a particulate form and a partial coating of copper or a copper rich substance in intimate contact with the silicon, the silicon-rich alloy or the silicon-rich substance. The second stage contains calcium oxide, a calcium oxide containing material, or a soda lime containing medium.

Dry exhaust gas conditioning

A process for producing a polysiloxane oil with aryl groups and oxygen atoms as co-substituents on the silicon atoms. Silicon monoxide gas is reacted under a vacumm with iodine and an aromatic compound such as toluene in solution at a low temperature in the region of -75.degree. C. to -95.degree. C.

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Bristol, United Kingdom

Peter L Timms