Cambridge Display Technology Limited

National University of Singapore

Cambridge Enterprise Limited

Cambridge University Technical Services Limited

Peter Kian-Hoon Ho

Richard Henry Friend

Lay-Lay Chua

Ji-Seon Kim

Henning Sirringhaus

Rui-Qi Png

Cindy Guan-Yu Tang

Perq-Jon Chia

Sankaran Sivaramakrishnan

Mervin Chun-Yi Ang

Kim-Kian Choo

Siong-Hee Khong

Jana Zaumzeil

A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.

N-doped electrically conductive organic materials

There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (E) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.

n-Doped electrically conductive polymeric material

A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Method for doping a polymer

A method of forming a polymer device including the steps (i) of depositing on a substrate a solution containing a polymer or oligomer and a crosslinking moiety, to form a layer, and, (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer, wherein the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 mol % to 5 mol % based on the total number of moles or repeat units of the polymer or oligomer and the crosslinking moiety in the solution.

Manufacture of a polymer device

There is provided a class of crosslinking compound, said compound comprising (i) one or more fluorinated aromatic group; and (ii) one or more ionizable group, wherein the crosslinking compound is soluble in at least one polar solvent. Methods of preparing the crosslinking compounds are also disclosed. There is further provided devices obtainable from the methods of preparing the crosslinking compounds.

Radiation crosslinker

A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual &#x2014;OH leaving groups.

Polymer transistor

A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of:

Method of making a polymer device

An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EA; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterized in that the bulk concentration of trapping groups in the gate dielectric layer is less than 10cm, where a trapping group is a group having (i) an electron affinity EAgreater than or equal to EAand/or (ii) a reactive electron affinity EAgreater than or equal to (EA&#x2212;2 eV).

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Singapore, Singapore

Peter Kian-Hoon Ho