Koninklijke Philips Corporation N.v.

Lumileds LLC

Philips Lumileds Lighting Company LLC

Lumileds Holding B.v.

Lumileds Lighting U.s., LLC

Other

Wordlock, Inc.

Philips Lighting Holding B.v.

Koninklijke Philips Electronics N.v.

Ludwig-maximillians-universitaet Muenchen

Philips Lumiled Lighting, U.S. LLC

Philips Lumileds Lighting, Us, LLC

Lumilecs LLC

Peter Josef Schmidt

Hans-Helmut Bechtel

Walter Mayr

Joerg Meyer

Wolfgang Schnick

Volker Weiler

Gerd O Mueller

Regina B Mueller-Mach

Wolfgang Busselt

Thomas Juestel

Detlef Uwe Wiechert

Baby-Seriyati Schreinemacher

Michael Ragan Krames

Matthias Heidemann

Oleg Borisovich Shchekin

Cora Sieglinde Hecht

Philipp-Jean Strobel

Andreas Tücks

Helmut Bechtel

Thomas Justel

Theo Arnold Kop

Michael David Camras

April Dawn Schricker

Jyoti Kiron Bhardwaj

Joachim F Opitz

Jan De Graaf

Thomas Diederich

Christoph Martiny

Han Ho Choi

Thomas Jüstel

Niels Jeroen Van Der Veen

Jorg Meyer

Gerd Mueller

Hans-Dieter Bausen

Danielle Chamberlin

Regina Mueller-Mach

Matthias Wendt

Marcel Rene Bohmer

Martinus Petrus Joseph Peeters

Yu-Chen Shen

Kentaro Shimizu

Hisashi Masui

Danielle Russell Chamberlin

Ken Shimizu

Dietrich Bertram

Ulrich Weichmann

Kurt Kemppainen

Jens Meyer

Johannes Baier

Erik Maria Roeling

Jacques Heuts

Florian Stadler

Volker Bachmann

Silvia Golsch

Henning Höppe

Philipp Alexander Hubert Pust

Sebastian Florian Schmiechen

Markus Armin Seibald

Ties Van Bommel

Cornelis Reinder Ronda

Nicola Bettina Pfeffer

Herbert Friedrich Boerner

Christoph Gerard August Hoelen

Rainer Hilbig

Rene Theodorus Wegh

Detlev F Hennings

Lucas Johannes Anna Maria Beckers

Herbert J Schreinemacher

Pieter Johannes Quintus Van Voorst Vader

Thomas J&uuml;stel

Robert Peter Scholl

Gero Heusler

Stefan Peter Grabowski

Uwe Mackens

Rob Engelen

Oliver Steigelmann

Rene Jan Hendriks

Patrick Henricus Johannes Van Stijn

Juliane Kechele

Achim Gerhard Koerber

Gerardus Wilhelmus Gerbe Van Dreumel

Yuri Aksenov

Cristian Dan

Jörg Meyer

Baby Seriyati Schreinemacher

Frauke Charlotte Hintze

Jordy Bernard Margreth Schoenmaekers

Jan Renier Marie Hochstenbach

Dajana Durach

Andreas Tuecks

Oliver Michael Oeckler

Darrin Leslie Craig

Jorge Meyer

Henning Hoppe

Gerd O Müller

Regina B Müller-Mach

Henning Hoeppe

Arjen Van Der Sude

Gerry Sorce

A wavelength converting structure is disclosed, the wavelength converting structure including a spinel type SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including AEADEO:Ni,Crwhere AE=Mg, Zn, Co, or Be, or mixtures thereof, A=Li, Na, Cu, or Ag, or mixtures thereof, D=Ga, Al, B, In, or Sc, or mixtures thereof, and E=Si, Ge, Sn, Ti, Zr, or Hf, or mixtures thereof; where 0≤x≤1, 0<y≤0.1, 0≤z≤1, 0≤u≤0.2.

Swir pcLED and spinel type phosphors emitting in the 1000-1700 nm range

A method of fabricating closely spaced pcLEDs () arranged in a matrix array () of perpendicular rows and columns comprises an initial phosphor deposition step in which phosphor () is deposited at alternating locations (pixels) in the matrix array in a checkerboard pattern, so that the locations () in the array at which phosphor () is deposited are not adjacent to each other. In a subsequent phosphor deposition step phosphor is deposited at the alternating locations at which phosphor was not deposited in the first deposition step. In between the two phosphor deposition steps, reflective or scattering structures () may be fabricated on sidewalls of the phosphor pixels to optically isolate pcLEDs in the resulting array from each other.

Two step phosphor deposition to make a matrix array

A method of forming a nitridophosphate is disclosed, the method including forming a precursor mixture by combining a metal source material, a phosphorus source material, and a nitrogen source material, and heating the precursor mixture at a maximum temperature between 800° C. and 1300° C. in an atmosphere including nitrogen gas at a pressure between 2 MPa and 500 MPa.

Nitridophosphate phosphors for solid state lighting and method of production

A wavelength converting structure is provided, the wavelength converting structure including an SWIR phosphor having emission wavelengths in the range of 1600-2200 nm, the SWIR phosphor comprising a structurally disordered garnet material, a sensitizer ion, and at least one rare earth emitter ion. Also provided is a luminescent material having emission wavelength in the range of 1600-2200 nm, the luminescent material including (GdLuTmHoScRE)[ScLuCrGaAl]{GaAl}Owith RE=La, Y, Yb, Nd, Er, Ce and 0≤u≤2, 0<v≤1, 0<x≤1, 0<y≤0.5, 0≤z≤0.05, 0<a≤1, 0<b≤0.3, 0≤c≤3, 0<d≤1.8, 0≤e≤1.8. An IR emitting device including the luminescent material may provide a broad-band emission in the wavelength range of 1600-2200 nm with a continuous emission spectrum over a spectral width of at least 500 nm.

Phosphor compositions and short wavelength infrared emitting pcLEDs emitting in the 1600-2200 nm wavelength range

A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including ScARE:Cr, wherein MO=PO, BPO, SiPO; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0≤x≤0.75, 0≤y≤0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

NIR broadband emitting phosphors for infrared spectroscopy

An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Inorganic bonded devices and structures

This specification discloses methods of enhancing the stability and performance of Eudoped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCrCcrystal structure type and having a composition of AELiAlSiON:Eu(AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0≤y<1, 0<z<0.05, y+z≤1). It is believed that the formal substitution (Al,O)by (Si,N)reduces the concentration of unwanted Euand thus enhances properties of the phosphor such as stability and conversion efficiency.

Narrow band emitting SiAION phosphor

The invention provides a method for providing a luminescent particle () with a hybrid coating, the method comprising: (i) providing a luminescent core () comprising a primer layer () on the luminescent core (); (ii) providing a main ALD coating layer () onto the primer layer () by application of a main atomic layer deposition process, the main ALD coating layer () comprising a multilayer () with two or more layers () having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer () onto the main ALD-coating layer () by application of a main sol-gel coating process, the main sol-gel coating layer () having a chemical composition different from one or more of the layers () of the multilayer ().

Phosphor particle coating

The invention provides a method for providing a luminescent particle with a hybrid coating, the method comprising: (i) providing a luminescent core comprising a primer layer on the luminescent core; (ii) providing a main ALD coating layer onto the primer layer by application of a main atomic layer deposition process, the main ALD coating layer comprising a multilayer with two or more layers having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer onto the main ALD-coating layer by application of a main sol-gel coating process, the main sol-gel coating layer having a chemical composition different from one or more of the layers of the multilayer.

In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Wavelength converted light emitting device

A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including ScARE:Cr, wherein MO=PO, BPO, SiPO; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0&#x2264;x&#x2264;0.75, 0&#x2264;y&#x2264;0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni, a perovskite type phosphor doped with Niand Cr, and a garnet type phosphor doped with Niand Cr.

SWIR pcLED and perovskite type and garnet type phosphors emitting in the 1000-1700 nm range

The invention provides luminescent material comprising EScMZASiGeAlO:Cr, wherein:

IR emitting pyroxene phosphors and light emitting device using the same

This specification discloses a method of enhancing the stability and performance of Eudoped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCrCcrystal structure type and having a composition of AELiAlSiON:EU(AE=Ca, Sr, Ba; 0&#x3c;x&#x3c;0.04, 0&#x2264;y&#x3c;1, 0&#x3c;z&#x3c;0.05, y+z&#x2264;1). It is believed that the formal substitution (Al,O)by (Si,N)reduces the concentration of unwanted Euand thus enhances properties of the phosphor such as stability and conversion efficiency.

Narrow band emitting SiAlON phosphor

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Aachen, Germany

Peter Josef Schmidt