Eastman-kodak Company

Other

Carestream Health, Inc.

Global Oled Technology LLC

Cerion LLC

Peter Jerome Cowdery-Corvan

David Howard Levy

Diane Carol Freeman

Lyn Marie Irving

Cheng Yang

Shelby Forrester Nelson

Kumars Sakizadeh

David R Whitcomb

Leif P Olson

Franklin D Saeva

Roger L Klaus

Thomas D Pawlik

Takuzo Ishida

Sharon M Melpolder

Alfred J Alton

Joseph Anthony Manico

Charles Chester Anderson

Lee William Tutt

Carolyn Rae Ellinger

Seshadri Jagannathan

Kenneth Joseph Reed

Eric R Schmittou

Yun C Chang

Thomas D Weaver

Wojciech M Przezdziecki

Diane E Kestner

Arunachalam T Ram

Richard Kenneth Hailstone

Kathleen R Gisser

Therese M Feller

Thomas Dale Allston

John F DeCory

James P Besse

Leo J Magee, Jr

Michael W Martin

Carly Louise Augustyn

Louis J Markin

A process for the production of LiMSiOwhere M is selected from the group Fe, Mn, Co, and Ni, is disclosed. The process uses an atmospheric-pressure solvothermal synthesis and a calcining step wherein the solvent is selected to be stable from decomposition over the solvothermal process conditions. The solvothermal solvent is recoverable and reusable. The process also relies on an excess of lithium in the starting materials mix to promote phase-purity of the LiMSiOcrystalline phase. The LiMSiOmaterial is used as a cathode material in a lithium ion battery cell.

Method for production of Li2MSiO4 electrode materials

A method of making cerium-containing metal oxide nanoparticles in non-polar solvent eliminates the need for solvent shifting steps. The direct synthesis method involves: (a) forming a reaction mixture of a source of cerous ion and a carboxylic acid, and optionally, a hydrocarbon solvent; and optionally further comprises a non-cerous metal ion; (b) heating the reaction mixture to oxidize cerous ion to ceric ion; and (c) recovering a nanoparticle of either cerium oxide or a mixed metal oxide comprising cerium. The cerium-containing oxide nanoparticles thus obtained have cubic fluorite crystal structure and a geometric diameter in the range of about 1 nanometer to about 20 nanometers. Dispersions of cerium-containing oxide nanoparticles prepared by this method can be used as a component of a fuel or lubricant additive.

Cerium containing nanoparticles prepared in non-polar solvent

The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.

Process for atomic layer deposition

The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.

Colored mask combined with selective area deposition

A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 10ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer.

Method of manufacturing an inverted bottom-emitting OLED device

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Process for selective area deposition of inorganic materials

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Organosiloxane materials for selective area deposition of inorganic materials

The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.

Process for making doped zinc oxide

A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250&#xb0; C., during deposition of the organic thin film.

Process for depositing organic materials

The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Photopatternable deposition inhibitor containing siloxane

This invention relates to a composition of matter comprising associated predominantly silver nanoparticles, and a method of making the nanoparticles. It further relates to articles comprising the nanoparticles.

Silver nanoparticles made in solvent

Non-photosensitive direct thermographic materials comprise a reducing agent that is a catechol borate compound. These compounds can reduce silver(I) ion to metallic silver to produce a dense black silver image under the short time and high temperature conditions that occur when using thermal print-heads during direct thermal printing.

Direct thermographic materials with catechol borate reducing agents

Ionic liquids are added to black-and-white direct thermographic materials to provide increased image density or to allow for reduced silver coverage (that is, improved silver efficiency). Useful ionic liquids include imidazolium, pyrazolium, pyridinium, pyrimidinium, pyrazinium, tetra-alkylammonium, or tetra-alkylphosphonium cations.

Thermographic materials containing ionic liquids

Non-photosensitive direct thermographic materials comprise a reducing agent that is a specific ortho-amino-phenol, para-amino-phenol, or hydroquinone compound. These compounds can reduce silver(I) ion to metallic silver to produce a dense black silver image under the short time and high temperature conditions that occur when using thermal print-heads during direct thermal printing. The materials are characterized by their calculated aqueous deprotonation and their calculated anion HOMO energies.

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Webster, NY, United States of America

Peter Jerome Cowdery-Corvan