Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Peter Jander

Clemens Vierheilig

Tomasz Swietlik

Michael Roth

A laser diode chip is described, comprising including:

Laser diode chip

In one embodiment, the semiconductor laser comprises a housing in which multiple laser diode chips are encapsulated. The housing comprises a cover panel and/or a lateral wall which is permeable to the generated laser radiation. The cover panel and/or the lateral wall has a light outlet surface with adjacent outlet regions. Each of the outlet regions is paired with precisely one of the laser diode chips. The light outlet surface is arranged downstream of a light outlet plane. The cover panel and/or the lateral wall has a different average thickness in the outlet regions such that the optical wavelength for the laser radiation of all of the laser diode chips is the same up to the light outlet plane with a tolerance of maximally 1.5 μm.

Semiconductor laser and method for producing a semiconductor laser

A light-emitting device () is specified, which has a housing () with a mounting surface () and a housing recess (), a semiconductor laser diode () being arranged in the housing recess, which is intended and embodied to emit laser light () in a direction parallel to the mounting surface () during operation, an optical element () being arranged downstream of the semiconductor laser diode in the beam path of the laser light, the semiconductor laser diode being mounted in the housing in such a way that the laser light has a maximum divergence in a plane parallel to the mounting surface, the optical element having a light-incoupling surface (), exactly one reflector surface () and a light-outcoupling surface (), the optical element being a one-piece housing cover which completely covers the housing recess in which the semiconductor laser diode is arranged, and the light-outcoupling surface being part of an outer surface of the optical element opposite the mounting surface.

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Wuppertal, Germany

Peter Jander