Honeywell G.m.b.h.

Peter James Bobrowitz

Paul W Schwerman

Peter David Bailey

A novel bias circuit provides precise base emitter voltage(V.sub.BE) which tracks the temperature coefficient of an RF transistor using low cost devices. The bias circuit includes a precision current source which injects current through a P-N junction device to derive a temperature compensating reference voltage thereacross. The P-N junction device is isolated from current fluctuations using a current isolation circuit coupled between the P-N junction device and the base of the RF transistor. The diode is thereby isolated from and unaffected by changes in the base current of the RF transistor. Multiple RF transistors are biased from the single P-N junction device by replicating only a trimming potentiometer and the current isolation circuitry for each additional RF transistor to be biased.

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Glendale, AZ, United States of America

Peter James Bobrowitz