Texas Instruments Corporation

Peter J Sakakini

Richard L Mahle

Sean Michael Malolepszy

Henry L Humphrey

Scott Anthony Delmont

Larry D Giaudrone

Michael W Pryor

Randy V Tekavec

A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.

Method for reducing stress concentrations on a semiconductor wafer by surface laser treatment

Method for reducing stress concentrations on a semiconductor wafer by surface laser treatment including the backside

Thick film bond surfaces ( ) on a support structure ( ), such as a ceramic substrate or an IC package substrate, tend to deform during processing. A personality kit ( ) having raised bosses ( ) engages with and compresses the bond surfaces, resulting in a flatter, wider bond surface having improved reflectivity. The personality kit ( ) is fit within a clamp ( ) that can be used as a stand-alone unit or integrated into an existing machine, such as a wire bonder ( ).

Bond surface conditioning system for improved bondability

A leadframe loader having a magnetic latch of predefined strength connecting a drive arm mechanism and a pusher system is the preferred embodiment of a transport loader. The amount of force applied to a pusher blade is set to a level below that where a leadframe, or other device to be pushed would be damaged by selecting the size and strength of a magnetic latch attached to the drive arm. The magnet is designed to break away from the steel coupling structure on the pusher when the force exceeds a preset value, and stops the movement before damage to the leadframe occurs. Calculated values were verified by physical testing, and a safety margin assigned to insure release of the magnet prior to bending leadframes. The system is assimilated into different pieces of semiconductor assembly equipment.

Magnetic latch transport loader

A method for bonding includes positioning a bonding strip adjacent a sole first bond head, the bonding strip having a plurality of strip units, and bonding, with only the first bond head, a first number of the plurality of strip units. The method further includes transporting the bonding strip from the first bond head and positioning the bonding strip adjacent a sole second bond head, and bonding, with only the second bond head, a remaining number of the plurality of strip units on the bonding strip. In one embodiment, the method also includes heating at least one of the plurality of strip units prior to bonding the bonding strip. In one embodiment, the method also includes clamping, with a sole clamp, the bonding strip, thereby limiting warpage of the bonding strip.

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Frisco, TX, United States of America

Peter J Sakakini