Affymetrix, Inc.

Other

Cardiac Mariners, Inc.

Kla-Tencor Technologies Corporation

Photon Dynamics, Inc.

Affymetrix Technologies, N.v.

Peter J Fiekowsky

David Stern

Edward Gerald Solomon

Jack W Moorman

Robert E Melen

Abigail A Moorhouse

Richard P Rava

Mark O Trulson

Ian Walton

Brian Skillicorn

John W Wilent, Deceased

Stephen P Fodor

Dan M Bartell

Stephen P A Fodor

Richard Erich Schuster

Jeffrey A Hawthorne

April Dutta

Robert E Cummins

Paul R Kube

Daniel H Scott

John W Wilent

Fluorescently marked targets bind to a substratesynthesized with polymer sequences at known locations. The targets are detected by exposing selected regions of the substrateto light from a light sourceand detecting the photons from the light fluoresced therefrom, and repeating the steps of exposure and detection until the substrateis completely examined. The resulting data can be used to determine binding affinity of the targets to specific polymer sequences.

Methods and apparatus for detection of fluorescently labeled materials

A fast method simulates photolithography using conventional image processing techniques. Convolution simulates blurring due to optics; erosion and dilation correct for edge diffraction. To produce the convolution kernel, an effective projection lens image for the image source is produced by convolving the lens image with an image of the illuminator aperture shape. An effective projection lens image for the stepper is produced similarly. The stepper effective lens image is divided by the image source effective lens image to produce a corrected effective lens image. A corrected convolution kernel is produced by taking a Fourier transform of the corrected effective lens image. The kernel is used to convolve the image, once using energy and once using voltage, and then squaring the result. The aerial image is produced by blending the energy and voltage convolutions according to the computed partial coherence of the optics. Complex convolution is used to represent relative phases other than 180 degrees.

Fast image simulation for photolithography

A fast method simulates photolithography using conventional image processing techniques. Convolution simulates for blurring; erosion and dilation correct for edge diffraction. In one technique, the source image of the photomask is deconvolved to sharpen it and then dilated to remove edge diffraction. The image is eroded, and then convolved according to the resolution of the stepper at the photomask plane. This aerial image can be further eroded to match the effects of resist and developing. Optional thresholding is done to produce a simulated processed wafer image. In a fast technique, the deconvolution step is eliminated. Dilation and erosion are combined into a single erosion. Where a phase shift mask is involved, a complex convolution is used. Source data can come from the photomask electronic design or from a visual image of the actual photomask. Optimizations include: special microprocessor instructions, floating point pixel values, separable convolution and annular illumination simulation.

An OPC feature measurement technique accurately measures serif area of OPC features, feature separation and line symmetry, and is especially useful for measuring dimensions which are less than about the wavelength of the examining radiation. The relative area of serifs present on a line end is measured by first defining a region of interest around the line end and then an intensity profile is created. The differences between data points on the profile and a constant value are summed in order to calculate a flux value. The flux value is divided by the intensity range to determine an area. The separation distance between a line end and another feature is determined by first defining a region of interest that spans the separation distance between the two features. Next, an intensity profile is created. The differences between data points on the profile and a constant value are summed to calculate a flux value. The separation distance between the features is calculated from the flux value. The asymmetry of serifs of a line present on a photomask is determined by first defining two regions of interest: a shank region of interest that includes the shank of the line and an end region of interest that includes the end of the line. Intensity profiles are created for both regions of interest. The profiles are created by summing values in a longitudinal direction with respect to the line. Finally, an asymmetry area value for the serifs is calculated using the end intensity profile and a centroid of the shank region of interest. The effective diameter, the separation distance and the asymmetry area are useful for evaluating the quality of the photomask.

Optical proximity correction serif measurement technique

Fluorescently marked targets bind to a substrate synthesized with polymer sequences at known locations. The targets are detected by exposing selected regions of the substrate to light from a light source and detecting the photons from the light fluoresced therefrom, and repeating the steps of exposure and detection until the substrate is completely examined. The resulting data can be used to determine binding affinity of the targets to specific polymer sequences.

Method and apparatus for detection of fluorescently labeled materials

An x-ray imaging system according to the present invention comprising a stepped scanning-beam x-ray source and a multi-detector array. The output of the multi-detector array is input to an image reconstruction engine which combines the outputs of the multiple detectors over selected steps of the x-ray beam to generate an x-ray image of the object. A collimating element, preferably in the form of a perforated grid containing an array of apertures, interposed between the x-ray source and an object to be x-rayed. A maneuverable positioner incorporating an x-ray sensitive marker allowing the determination of the precise position coordinates of the maneuverable positioner.

Scanning-beam X-ray imaging system

Systems and methods for aligning scanned images are provided. A pattern is included in the scanned image so that when the image is convolved with a filter, a recognizable pattern is generated in the convolved image. The scanned image may then be aligned according to the position of the recognizable pattern in the convolved image. The filter may also act to remove the portions of the scanned image that do not correspond to the pattern in the scanned image.

Scanned image alignment systems and methods

A measurement tool connects to an automatic inspection machine for measuring microscopic characteristics of features on a photographic mask. Widths of densely packed lines are measured for features having sizes of less than about the wavelength of the examining radiation. A simulated intensity profile is subtracted from the actual measured intensity profile to obtain an error profile. The error profile provides edge position corrections which adjust the originally estimated edge positions. A new, simulated intensity profile is created and the process is repeated until the error profile is deemed acceptable. The line width is measured by measuring between the estimated edge positions. The opacity of a feature is determined and used for correcting dimension measurements. A formula determines the opacity based upon the contrast, the measured dimension and the single data point. Width or height of an irregular feature is calculated accurately. Dimension of the feature is determined using the peak width data and the peak width standard deviation.

Microscopic feature dimension measurement system

A measurement tool connects to a microscope which may be an automatic inspection machine for identifying and measuring microscopic dimensions of features on a photographic mask such as opacity, area, diameter, width, height, line widths and corner radius. Dimensions of features having sizes of less than about twice the wavelength being used (less than 1 micron for visible light) are measured quickly and accurately in a production environment. The opacity of a feature is determined and used for correcting area or height measurements as well as helping to determine what the feature is made of. A contrast vs. diameter curve for known opaque features is used to determine opacity of unknown features. The curvature of the intensity profile of the feature is used in conjunction with a curvature-width lookup table in order to produce the width of the feature. Curvature-width lookup data is developed from the area and diameter of known round defects along with the curvature of the profile of the round defects. A width-height multiplier is used to correct the measured height due to the blurring associated with sizes of features close to the wavelength being used. An opacity correction is also used to correct the height of features that are less than 100% opaque. Width-height multiplier data is developed by measuring the area and diameter of known round defects, measuring their height and computing a multiplier. An actual measurement of the height of a feature measures both the height and the width. Width-height multiplier data is referenced using the measured width to produce a height multiplier for that width. The radius of curvature is also determined at submicron sizes using a flux measurement.

Microscopic feature opacity measurement system

A measurement tool connects to a microscope for identifying and measuring microscopic dimensions of features on a photographic mask such as area, diameter and corner radius. Dimensions of features having sizes of less than about twice the wavelength being used (less than 1 micron for visible light) are measured quickly and accurately. The radius of curvature is also determined at submicron sizes using a flux measurement. Determination of the expected flux of a perfect comer aids in the measurement.

Microscopic corner radius measurement system

High accuracy particle dimension measurement system

A method and apparatus for imaging a sample are provided. An electromagnetic radiation source generates excitation radiation which is sized by excitation optics to a line. The line is directed at a sample resting on a support and excites a plurality of regions on the sample. Collection optics collect response radiation reflected from the sample I and image the reflected radiation. A detector senses the reflected radiation and is positioned to permit discrimination between radiation reflected from a certain focal plane in the sample and certain other planes within the sample.

Method and apparatus for imaging a sample on a device

A measurement tool connects to an automatic inspection machine for identifying and measuring microscopic dimensions such as area, diameter, height and line width of defects and lines of a photographic mask. An operator draws a rough region of interest around a feature and the tool automatically identifies the feature and calculates its dimensions. For features less than one micron in size, the size of light photons interferes with measurement, so a non-linear polynomial calibration curve is developed for each machine. Features of known sizes are measured on a production machine to produce a calibration curve for each type of defect or line. Features of unknown sizes are measured on the same machine and the measured size in pixels are calibrated using the calibration curve to return a more accurate reading in microns. To determine a dimension, the type of a feature is determined by using a bounding box and light transitions of an intensity profile of the feature; multiple regions of interest are developed for each feature to accommodate angled lines; columns of pixels in each region of interest are summed to produce a light intensity distribution profile for each region of interest; total flux is determined from each profile and the best flux measurement is used to calculate a dimension of the feature. A good image of a feature is obtained by subtracting a reference image from an original image if a profile is of low quality. For lines separated by less than one resolution unit, a fall-width half-maximum technique is used to calculate line width.

Fluorescently marked targets bind to a substrate 230 synthesized with polymer sequences at known locations. The targets are detected by exposing selected regions of the substrate 230 to light from a light source 100 and detecting the photons from the light fluoresced therefrom, and repeating the steps of exposure and detection until the substrate 230 is completely examined. The resulting data can be used to determine binding affinity of the targets to specific polymer sequences.

Growing community of inventors

Los Altos, CA, United States of America

Peter J Fiekowsky