International Business Machines Corporation

Peter J Duke

Voya Rista Markovich

Alfred Viehbeck

Terrence Robert O'Toole

Martin J Goldberg

Elizabeth F Foster

Donald G McBride

Stephen L Tisdale

Harry R Bickford

Linda C Matthew

Krystyna Waleria Semkow

Jerry Leff

Leann G Keim

Leo C Liclican

Mark V Powell

A structure including a halogenated polymeric-containing layer. At least a portion of a surface of the halogenated polymeric-containing layer is electrochemically reduced. An electrically conductive pattern is provided over at least a portion of the electrochemically reduced portion of the halogenated polymeric-containing layer.

Structure including a partially electrochemically reduced halogenated

A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.

Method for conditioning halogenated polymeric materials and structures

A method of treating a halogenated polymeric-containing substrate including exposing at least portions of the halogenated polymeric-containing substrate to a composition containing a reducing agent and an aprotic solvent selected from the group consisting of nitriles, nitro compounds, amides, esters, carbonates, oxides, sulfo compounds and mixtures thereof. The solvent is free of ethers, amines, ammonia. The composition is prepared by reacting a metal with an organic compound selected from the group consisting of polyaryl compounds, aromatic carbonyl containing compounds, aromatic nitriles, and aromatic heterocyclic nitrogen containing compounds in a reaction solvent that does not react with the metal but permits reaction between the metal and the organic compound to thereby provide the reducing agent. The reducing agent is isolated from the reaction solvent to obtain a reaction product as a solid. The reaction product is added to the aprotic solvent. The treated substrate is contacted with a material to promote adhesion of the material to the treated surface.

Disclosed is a method of fabricating a microelectronic package having least one layer formed of a Cu-Invar-Cu core encapsulated between a pair of dielectric films. The package is intended to carry surface circuitization on an external surface, with internal circuitization from the surface circuitization passing through the core. The method includes contacting the copper within the Cu-Invar-Cu core with a copper etching aqueous solution of a strong base and a strong oxidizing acid, while maintaining the copper anodic. This electrolytically converts the copper to soluble copper oxides. In a separate step the Invar of the Cu-Invar-Cu core is electrolytically etched with an Invar etching aqueous solution of sodium chloride. This step is carried out under conditions to electrolytically form soluble iron and nickel chlorides while passivating the copper.

Electrolytic method for forming vias and through holes in

Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper-Invar-copper core encapsulated between a pair of dielectric films. The method includes exposing a copper-Invar-copper surface of the copper-Invar-copper core, for example, exposing an edge of the copper-Invar-copper core or drilling a whole through the layer to expose internal copper-Invar-copper. The copper-Invar-copper is then shaped, that is, back etched. This is an electrolytic process where the package is immersed in a substantially pH neutral electrolyte including a counter- electrode. A preferred electrolyte is an aqueous alkali metal nitrate solution. The electrolyte wets the exposed surface of said copper-Invar-copper core. The exposed surface of the copper-Invar-copper core is rendered anodic with respect to the counter-electrode and an electrical potential is applied therebetween. This results in electrochemically etching and shaping the copper-Invar-copper surface.

Electrolytic method for the etch back of encapsulated

This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.

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Endwell, NY, United States of America

Peter J Duke