Sputtered Films, Inc.

Other

Applied Science & Technology, Inc.

Shamrock Technology Corp.

Peter J Clarke

Robert George Begin

Jack A Dimock

Andrew P Clarke

Amos Barb

An electric field is provided in a first direction between an anode and a target having a flat disposition. A magnetic field is provided such that the magnetic flux lines are in a second direction substantially perpendicular to the first direction. The magnet structure may be formed from permanent magnets extending radially in a horizontal direction, like the spokes of a wheel, and from magnetizable pole pieces extending vertically from the opposite ends of the spokes. The permanent magnets and the pole pieces define a well. The target is disposed in the well so that its flat disposition is in the same direction as the magnetic flux lines. Molecules of an inert gas flow through the well. Electrons in the well move in a third direction substantially perpendicular to the first and second directions. The electrons ionize molecules of the inert gas. The ions are attracted to the target and sputter atoms from the surface of the target. The sputtered atoms become deposited on a substrate. Reflectors in the well near the radially outer walls of the magnet structures, and also in one embodiment near the radially inner walls of the magnet structures, prevent the electrons from striking the permanent magnets. The reflectors and the anode are cooled by a fluid (e.g. water). The resultant magnetron sputters as much as 65% of the material from the target on the substrate in contrast to a sputtering of approximately 35% of material from the targets on substrates in the prior art.

Flat magnetron

An electrical field between a positive anode and a negative target in a cavity and a magnetic field in the cavity cause electrons from the target to ionize neutral gas (e.g. argon) atoms in the cavity. The ions cause the target to release sputtered atoms (e.g. aluminum) for deposition on a substrate. A shield between the target and the substrate inhibits charged particle movement to the substrate. The anode potential may be positive, and the shield and the magnetic members may be grounded, to obtain electron movement to the anode, thereby inhibiting the heating of the shield and the magnetic members by electron impingement. The anode may be water cooled. The magnitude of the positive anode voltage relative to the target voltage provides selectively for (a) a uniform thickness of sputtered atoms on the walls of a groove in the substrate or (b) a filling of the groove by the sputtered atoms and a uniform thickness of deposition on the substrate surface including the filled groove. Progressive differences in the anode-substrate voltage produce progressive increases in the rate of the sputtered atom deposition on the substrate. Oxygen flow into the cavity may be varied through a wide range at a substantially constant anode voltage to produce a deposition of aluminum oxide on the substrate with variations in the refraction index between approximately 1.63-1.70. A selected oxygen flow rate may accordingly produce an acceptable aluminum oxide refraction index in the 1.63-1.70 range, without affecting the anode voltage, even with minor oxygen flow rate variations.

Apparatus for, and method of, depositing a film on a substrate

A robotic arm assembly in a transport module is expansible to have an effector at its end receive a substrate in a cassette module and is then contracted and rotated with the effector to have the effector face a process module. Planets on a turntable in the process module are rotatable on first parallel axes. The turntable is rotatable on a second axis parallel to the first axes to move successive planets to a position facing the effector. At this position, an alignment assembly is aligned with, but axially displaced from, one of the planets. This assembly is moved axially into coupled relationship with such planet and then rotated to a position aligning the substrate on the effector axially with such planet when the arm assembly is expanded. A lifter assembly aligned with, and initially displaced from, such planet is moved axially to lift the substrate from the effector. The arm assembly is then contracted, rotated with the effector and expanded to receive the next cassette module substrate. The lifter assembly is then moved axially to deposit the substrate on the planet. When the substrates have been deposited on the planets, the planets are individually rotated on the first axes by a stator rotatable on the second axis with the turntable. Guns having a particular disposition relative to the planets provide controlled depositions on the substrates during such planet rotations. The planets and the end effector hold the substrates at peripheral positions displaced from the controlled substrate depositions.

System for and method of providing a controlled deposition on wafers

System for and method of providing a controlled deposition of wafers

An end effector in a robotic arm assembly receives a substrate in a cassette module and moves the substrate into a process module. A turntable rotatable on a fixed axis rotates a stator and a planet in the process chamber to a position of the planet in axial alignment with the end effector in the process chamber. A lifter assembly axially aligned with, and initially axially displaced from, the axially aligned planet is moved axially to lift the substrate from the end effector. The end effector is then withdrawn by the robotic arm assembly from the process chamber and the substrate is deposited by the lifter assembly on the axially aligned planet. When successive substrates have been sequentially deposited on a plurality of planets in the process chamber in the manner described above, the planets are individually rotated by the turntable relative to the stator on a second axis displaced from the first axis. The stator has peripheral teeth which mesh with teeth on the planets, the teeth being constructed (e.g. by individual peripheral cuts) to prevent slippage in the planet rotations. A resilient member on the stator engages each planet to instantaneously brake the planets when the turntable is de-energized. A gun provides a deposition on the substrates during the rotation of the planets. In this way, each deposition on each substrate is provided with a substantially uniform thickness at the different positions on the substrate.

Apparatus for, and method of, providing controlled depositions on

An electrical field between a positive anode and a negative target in a cavity and a magnetic field in the cavity produce electron flow from the target in a convoluted path for ionizing a gas such as oxygen flowing through the cavity. The ionized oxygen forms positive and negative oxygen ions which flow from the cavity to an aluminum oxide surface on a substrate. The aluminum oxide surface may contain hydrocarbon molecules which prevent a thin magnetizable layer from adhering uniformly on the aluminum oxide surface. The ionized oxygen molecules and atoms flow through the cavity at a reduced rate and react chemically with the hydrocarbon molecules to form water vapor and carbon monoxide and/or carbon dioxide gases. By removing the hydrocarbons from the aluminum oxide surface, the layer of the magnetizable material is deposited adheringly on the aluminum oxide surface. A neutral gas (e.g. argon atoms) flows through the cavity, at a rate reduced from the normal flow rate, with the oxygen to become ionized by the electrons. The ionized argon atoms cause atoms to be sputtered from the target for movement toward the substrate surface. When the target is made from aluminum, aluminum oxide (Al.sub.2 O.sub.3, Al.sub.2 O.sub.2, Al.sub.2 O, etc.), atoms are deposited on the substrate surface because of the reaction of the aluminum atoms with the oxygen in the cavity. However, the aluminum oxide layer deposited is quite thin and does not affect the action of the oxygen in removing the hydrocarbons from the substrate surface.

Apparatus for, and method of, removing hydrocarbons from the surface of

System for providing a controlled deposition on wafers

A target, preferably frusto-conical, defines a cavity with an anode. Molecules of a neutral gas (e.g. argon) pass through the cavity at a particular rate. An alternating voltage is applied between the anode and the cathode. When the anode voltage is positive relative to the cathode, electrons are emitted from the cathode and are directed to the anode. A magnetic field is produced on the electrons in a direction transverse, preferably substantially perpendicular, to the electrical field. The magnetic field causes the electrons to travel in a spiral path between the anode and the target, thereby enhancing the ionization rate of the argon molecules passing through the cavity. The positive argon ions impinge on the target and cause atoms to be sputtered from the target surface. These atoms become deposited on a surface of a substrate displaced from the target. When the anode voltage is negative, the discharge is extinguished and electrons travel in the spiral path toward the target (which is now positive) and discharges any positive charge buildup on the target. Two of the assemblies as disclosed above may be angularly displaced, preferably by substantially 180.degree., from each other relative to an axis on which the substrate is located. Each anode and the target associated with the other anode have a common connection with the source of the alternating voltage.

Apparatus for, and method of, providing a deposition on a substrate

System providing a controlled deposition of wafers

A method wherein wafers are transferred between a loading chamber and a central vacuum chamber. A plurality of first vacuum processing chambers are disposed in a satellite relationship around the central chamber. A plurality of second non-vacuum chambers are interspersed with the first chambers in a satellite relationship around the central chamber. A second central vacuum chamber communicates with one of the first chambers through a valve. Third and fourth pluralities of chambers are disposed in a satellite relationship around the second central chamber to respectively perform functions similar to those performed by the first and second chambers, the fourth chambers being interspersed with the third chambers.

Growing community of inventors

Montecito, CA, United States of America

Peter J Clarke