Applied Materials, Inc.

Microsaic Systems Limited

Peter I Edwards

Geoffrey Ryding

Marvin Farley

Takao Sakase

Adrian John Murrell

Bernard F Harrison

Peter T Kindersley

Shu Satoh

Richard H Cooke

Herbert Webber

Theodore H Smick

Ariel Lipson

Alan Finlay

Tristan Richard Holtam

Christopher P Wright

Richard William Moseley

Frank D Roberts

Stephen S Chamberlain

Geoffrey D Paffett

Bharathram Ganapathisubramani

Lionel Marmie

Bharathram Dept Of Aero Eng Imp Coll London Ganapathisubramani

This invention describes a vacuum interface for a mass spectrometer system formed from a diverging nozzle. The vacuum interface may be used to transfer a beam of ions from an atmospheric pressure ionization source into a vacuum chamber for analysis by a mass analyser.

Mass spectrometer system

An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Method of implanting a substrate and an ion implanter for performing the method

A gripper for loading wafers onto an implant wheel W and removing them from the wheel. The gripper having a substrate engaging mechanism () for engaging the substrate and a means for rotating this substrate engaging mechanism, such that wafers can be removed from the implant wheel, rotated to a second orientation and replaced without leaving the process chamber.

Method and apparatus for implanting semiconductor wafer substrates

Semiconductor processing apparatus is disclosed which provides for movement of a scanning armof a substrate or wafer holder, in at least two generally orthogonal directions (so-called X-Y scanning). Scanning in a first direction is longitudinally through an aperturein a vacuum chamber wall. The armis reciprocated by one or more linear motorsA,B. The armis supported relative to a slideusing gimballed air bearings so as to provide cantilever support for the arm relative to the slide. A compliant feedthroughinto the vacuum chamber for the armthen acts as a vacuum seal and guide but does not itself need to provide bearing support. A Faradayis attached to the armadjacent the substrate holderto allow beam profiling to be carried out both prior to and during implant. The Faradaycan instead or additionally be mounted adjacent the rear of the substrate holder or at 90&#xb0; to it to allow beam profiling to be carried out prior to implant, with the substrate support reversed or horizontal and out of the beam line.

Multi-directional scanning of movable member and ion beam monitoring arrangement therefor

An ion implanter for implanting ions into a substrate comprises an ion beam generator for generating a beam of ions, support means for carrying a substrate to be implanted with beam ions, scanning means for scanning at least one of the substrate and the ion beam relative to the other so that the beam traverses the substrate along a predetermined path. Monitoring means are arranged to monitor changes in the proportion of the ion beam cross-sectional area incident on the substrate as the ion beam traverses the edge of the substrate from a position in the scan at which the proportion is finite to a position at which the proportion is zero. The implanter further comprises detection means responsive to the monitoring means for detecting the moment when the proportion reaches zero from a finite value as the ion beam and/or substrate moves along the predetermined path, and operative means responsive to the detection means detecting the moment when the proportion of the beam cross-sectional area incident on the substrate reaches zero, for performing a subsequent operation in the ion implanter.

Apparatus and method for improved scanning efficiency in an ion implanter

An improvement which allows precise positioning of wafers within cassettes in preparation for removal of the wafers by automated equipment. The improvement includes mounting two sawtooth jigs upon the surface upon which the cassette tray is to be placed which extend up into the cassette. Wafers within the cassette rest within the precisely aligned grooves of the sawtooth jigs. When the cassette is placed upon the surface, automated equipment can readily remove the precisely aligned wafers from the cassette.

Method for aligning wafers within a semiconductor wafer cassette

An improvement which allows precise positioning of wafers within cassettes in preparation for removal of the wafers by automated equipment. The improvement includes mounting two sawtooth jigs upon the surface upon which the cassette tray is to be placed which extend up into the cassette. Wafers within the cassette rest within the precisely aligned grooves of the sawtooth jigs.

Apparatus for aligning wafers within a semiconductor wafer cassette

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West Sussex, United Kingdom

Peter I Edwards