Leica Microsystems Lithography Gmbh

Vistec Electron Beam Gmbh

Rangelow, Ivo

Peter Hudek

Ivo Rangelow

Dirk Beyer

Tzwetan Ivanov

Olaf Fortagne

Lemke Melchior

A method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which conforms to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimized set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.

Method for reducing the fogging effect

A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters &#x3b1;, &#x3b2; and &#x3b7;, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters &#x3b1;, &#x3b2; and &#x3b7; of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.

Process for controlling the proximity effect correction

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Jena, Germany

Peter Hudek