Osram Opto Semiconductors Gmbh

Osram Gmbh

Peter Heidborn

Günther Grönninger

Reiner Windisch

Ralph Wirth

Christian Jung

Walter Wegleiter

Norbert Linder

Klaus Streubel

Alexander Behres

Siegmar Kugler

An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are strained with mutually opposite mathematical signs.

LED semiconductor body

An LED semiconductor element including at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by a contact zone.

LED semiconductor element having increased luminance

An LED semiconductor element having at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer. The first active layer and the second active layer are electrically conductively connected by a contact zone.

An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.

LED semiconductor body and use of an LED semiconductor body

A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of AlGaAsPwith 0&#x2266;x&#x2266;1 and 0&#x2266;y&#x2266;1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.

Semiconductor substrate of GaAs and semiconductor device

A light-emitting diode based on GaAlAs has a window layer () of reduced thickness and is doped continuously with Si or Sn. The net concentration of the doping is less than 1 &#xd7;10cm. This provision lessens the degradation of the light-emitting diode ().

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Zeitlarn, Germany

Peter Heidborn