U.S. Philips Corporation

Peter Hansen

Detlev F Hennings

Claus-Peter Klages

Klaus Witter

Wolfgang F Tolksdorf

Klaus-Peter Schmidt

Detlef Raasch

Baby Seriyati Schreinemacher

Dieter Mergel

Marlies Urner Wille

Marlies Urner-Willie

A capacitor including a ceramic dielectric of a dielectric ceramic composition including a doped barium-calcium-zirconium-titanate of the composition (Ba.sub.1-.alpha.-.mu.-.nu. A.sub..mu. D.sub..nu. Ca.sub..alpha.) [Ti.sub.1-x-.delta.-.mu.'-.nu.' Mn.sub..delta. A'.sub..mu.' Zr.sub.x ].sub.z O.sub.3, where A=Ag, A'=Dy, Er, Ho, Y, Yb and Ga; D=Nd, Pr, Sm, Gd; D'=Nb, Mo, 0.10.ltoreq.x.ltoreq.0.25, 0.ltoreq..mu..ltoreq.0.01, 0.ltoreq..mu.'.ltoreq.0.01, 0.ltoreq..nu..ltoreq.0.01, 0 .nu.'0.01, 0&lt;.delta..ltoreq.0.01 and 0.995.ltoreq.z&lt;1 and 0.ltoreq..alpha..ltoreq.0.05, and including at least two electrodes, is characterized by a high dielectric constant K and a long service life, a low loss factor, a high insulation resistance and a capacitance with a low voltage dependence. The temperature dependence of its dielectric constant K corresponds to the EIA-standard Y5V.

Multilayer capacitor comprising barium-titanate doped with silver and

The invention relates to a ceramic multilayer capacitor having a number of ceramic layers on the basis of a doped (Ba,Ca)[Ti,Zr]O.sub.3 as well as a number of electrode layers of Ni, the ceramic layers and the electrode layers being alternately stacked to form a multilayer structure which is provided with electric connections at two side faces, said electric connections being connected to a number of the electrode layers. The invention is characterized in that the composition of the main component of the doped (Ba,Ca)[Ti,Zr]O.sub.3 corresponds to the formula

Ceramic multilayer capacitor

A capacitor comprising a ceramic dielectric material and at least two electrodes, said dielectric material essentially consisting of a dielectric composition with a doped barium-calcium-zirconium-titanate, said doped barium-calcium-zirconium-titanate having the composition

Multilayer capacitor comprising tungsten-containing BaTiO.sub.3

The invention relates to a magneto-optical recording medium having a magneto-optical layer which is composed of a quaternary alloy of Nd.sub.x Tb.sub.y Fe.sub.z Co.sub.m, the quantitative proportions of the alloying elements x, y, z and m being selected as follows:

Magneto-optical recording medium

A magneto-optical light switching element comprising islands which are formed from an epitaxial layer on the basis of bismuth-substituted rare earth metal iron garnet, which layer is provided on a nonmagnetic, optically transparent garnet substrate, integrated heating resistors being provided on the islands which are surrounded by a coil, the substrate being (100)-oriented and the coil being constructed as an integrated coil.

Magneto-optical light switching element and method of manufacturing same

A magneto-optical light switching element comprising islands which are formed from an epitaxial layer on the basis of bismuth-substituted rare earth metal iron garnet, which layer is provided on a magnetically unordered, optically transparent, (111)-oriented garnet substrate, integrated heating resistors being provided on the islands which are surrounded by a coil, the epitaxial layer being grown from a melt which contains lead oxide and boron oxide as a flux, the boron content of the melt used for growing the epitaxial layer being in the range from 12.7 to 25 at % (cation content) and the coil being constructed as an integrated coil.

A magneto-optic memory element consisting of a substrate provided with an amorphous layer of an alloy of a rare-earth metal and a transition metal. The layer has a uniaxial magnetic anisotropy. Such memory elements are suitable for storing digital information in the form of magnetized areas, the magnetizaiton direction of which can be read by means of the Kerr effect or Faraday effect. By adding bismuth to the alloy, the Kerr rotation and Faraday rotation can each be increased considerably, so that simpler reading of the stored information is possible.

Magneto-optical memory element

A magneto-optical memory element consisting of a substrate, provided with an amorphous layer of an alloy of a rare-earth metal and a transition metal. The layer has a uniaxial magnetic anisotropy. Such memory elements are suitable for storing digital information in the form of magnetized areas, the magnetization direction of which can be read by means of the Kerr effect or Faraday effect. By adding bismuth and/or tin to the alloy the Kerr rotation and Faraday rotation can each be increased considerably, so that simpler reading of the stored information is possible.

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Aachen, Germany

Peter Hansen