Siemens Aktiengesellschaft

Siemens Healthcare Gmbh

Agfa-gevaert

Siemens Healthineers Ag

Simens Aktiengesellschaft

Peter Hackenschmied

Stefan Wirth

Steffen Kappler

Jörg Freudenberger

Erich Hell

Karl Stierstorfer

Detlef Mattern

Matthias Strassburg

Christian Schröter

Anja Fritzler

Peter Geithner

Edgar Göderer

Manfred Fuchs

Daniel Niederlöhner

Miguel Labayen De Inza

Björn Kreisler

Thomas Weber

Mario Reinwand

Fabrice Dierre

Christoph Jud

Claus Pohan

Joerg Freudenberger

Marcus Radicke

Josef Deuringer

Andreas Freund

Gottfried Tschöpa

Wolfgang Knuepfer

Peter Kämmerer

Justus Tonn

At least one example embodiment provides an electron emitter apparatus having a first ring of field-effect emitter needles, the field-effect emitter needles of the first ring forming a first emitter surface on an inner side of the first ring; and a second ring of field-effect emitter needles, the field-effect emitter needles of the second ring forming a second emitter surface on an inner side of the second ring, wherein the first ring and the second ring are arranged in such that the first emitter surface and the second emitter surface form a substantially contiguous three-dimensional overall emitter surface, the substantially contiguous three-dimensional overall emitter surface defining a hollow channel along a longitudinal axis of the electron emitter apparatus.

Electron emitter apparatus

Some example embodiments provide an x-ray tube for a stereoscopic imaging having an evacuated x-ray tube housing; an electron emitter apparatus in the x-ray tube housing, the electron emitter apparatus including a first field effect emitter with a first emitter surface and a second field effect emitter with a second emitter surface, at least one of the first emitter surface or the second emitter surface being segmented such that a portion of the at least one of the first emitter surface or the second emitter surface can be set relative to the respective overall emitter surface by selectively switching emitter segments of the at least one of the first emitter surface or the second emitter surface; an anode unit in the x-ray tube housing, the anode unit configured to generate x-ray radiation for the stereoscopic imaging as a function of electrons striking two focal points; and a control unit.

X-ray tube for a stereoscopic imaging

An x-ray imaging system includes an x-ray source configured to emit x-ray radiation towards a sample, and a primary detector configured to detect x-ray radiation from the x-ray source passing through the sample. The x-ray imaging system also includes a secondary detector configured to detect x-ray radiation from the x-ray source scattered in the sample, and imaging optics configured to guide x-ray radiation scattered in the sample onto the secondary detector.

X-ray imaging system and method of x-ray imaging

The present disclosure provides an x-ray device including a housing configured to provide a vacuum therein, a cathode arranged inside the housing and configured to emit electrons, an anode arranged inside the housing and configured to produce x-ray radiation when impacted by electrons emitted by the cathode, and a converter configured to convert the x-ray radiation produced by the anode into monochromatic x-ray radiation, wherein the anode is configured to produce x-ray radiation in transmission and is arranged between the cathode and the converter. The present disclosure may be used in medical imaging, therapy, spectroscopy, and the like. Geometries and configurations may be improved compared to previously known x-ray devices when it comes to requirements for space, materials used, complexity of electrical wiring, distance between cathode and anode, and providing supplementary functions.

X-ray device and method of applying x-ray radiation

A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

X-ray direct conversion detector with additional radiation illumination

A method is disclosed for detecting x-rays using an x-ray detector which includes a direct-conversion semiconductor detector element. Additional radiation is supplied to the semiconductor detector element using a radiation source, and the supply of the additional radiation is controlled and/or regulated on the basis of a specified target value. In at least one embodiment, the target value can be specified in a variable manner over time as a sequence of target values. An x-ray detector system is further disclosed, with which the method can be carried out.

Detection of x-rays, and x-ray detector system

An X-ray detector is disclosed, in particular for a computed tomography system. In an embodiment, the X-ray detector includes a regular arrangement of measuring pixels for covering a measuring surface. A plurality of the measuring pixels of the regular arrangement are constructed as direct converting measuring pixels, and remaining ones of the measuring pixels are constructed as indirect converting measuring pixels.

X-ray detector

A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.

X-ray radiation detector, CT system and related method

A production method of a semiconductor element of a direct-converting x-ray detector is disclosed, wherein at least one intermediate layer is applied to a semiconductor layer and at least one contact layer is applied to an exposed intermediate layer by chemically currentless deposition of a contact material from a solution in each instance. The materials for the individual layers are selected such that the electrochemical potential of the materials of the at least one intermediate layer is greater than the electrochemical potential of at least one element of the semiconductor layer and the electrochemical potential of the contact material of the contract layer is greater than the electrochemical potential of the materials of the intermediate layers. Semiconductor elements produced in accordance with the method, an x-ray detector with semiconductor elements, an x-ray system with an x-ray detector and also a CT system with an x-ray detector are also disclosed.

Method for producing a semiconductor element of a direct-converting x-ray detector

A method is disclosed for the temperature stabilization of a direct-converting X-ray detector, including a detector surface having a semiconductor and being divided into a plurality of partial detector surfaces. During the irradiation of the detector surface, heat is generated in the semiconductor by electric power. Electric power generated in the semiconductor is kept constant for each partial detector surface at least during a heterogeneous and/or temporally variable irradiation of the detector surface by feeding-in power-adjusted additional radiation for each partial detector surface. A direct-converting X-ray detector is disclosed for the detection of X-rays. At least one control loop with at least one reference variable is embodied for the energy regulation of the additional radiation, which keeps the temperature in the semiconductor constant for each partial detector surface by keeping the electric power in the semiconductor constant by changing the energy of the additional radiation. A CT system is disclosed.

Method for temperature stabilization, X-ray detector and CT system

A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.

Direct radiation converter, radiation detector, medical apparatus and method for producing a direct radiation converter

A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5&#xb7;10&#x3a9;&#xb7;cm and 2&#xb7;10&#x3a9;&#xb7;cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.

Radiation converter material, radiation converter, radiation detector, use of a radiation converter material and method for producing a radiation converter material

A method is disclosed, in at least one embodiment, for producing a scintillator for a radiation detector, in which the scintillator is produced in layers by depositing a scintillator material using a PVD process. By using a PVD process, owing to lower process temperatures of less than 300&#xb0; C., it is possible to produce scintillators with decay times of less than 1.1 ns over large surfaces. In this way, the prerequisites for quantitative and energy-selective detection of individual radiation quanta can be satisfied even with fluxes of more than 10X-ray quanta/mm*s. At least one embodiment of the invention also relates to a scintillator produced by such a method.

Method for producing a scintillator and scintillator

A detector material for a detector is disclosed for use in CT systems, particularly in dual-energy CT systems, including a doped semiconductor. In at least one embodiment, the semiconductor is doped with a donator in a concentration, wherein the concentration of the donator corresponds to at least 50% of the maximum solubility thereof in the semiconductor material, and the donator produces flat imperfections having an excitation energy. The flat imperfections can be ionized and can provide additional freely moveable charge carriers. The freely moveable charge carriers can be captured by the spatially separated deep imperfections and thus reduce the number of the charged deep imperfections. In this way, pure time- and radiation-dependent effects, such as polarization, occur more often. The invention further more relates to the use of the detector material in a CT or dual-energy CT system for generating tomographic images of a test object.

Detector material for a detector for use in CT systems, detector element and detector

An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured according to at least one embodiment of the invention.

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Nuremberg, Germany

Peter Hackenschmied