Asml Netherlands B.v.

Peter Gerardus Jonkers

Johannes Hubertus Josephina Moors

Igor Vladimirovich Fomenkov

Alexander Igorevich Ershov

Martinus Hendrikus Antonius Leenders

Johannes Henricus Wilhelmus Jacobs

Jan Steven Christiaan Westerlaken

Fei Liu

Antonius Theodorus Wilhelmus Kempen

Andrew David LaForge

Yue Ma

William Peter Van Drent

Klaus Martin Hummler

Alexey Sergeevich Kuznetsov

Hendrikus Alphonsus Ludovicus Van Dijck

Rui Miguel Duarte Rodrigues Nunes

Hubertus Johannes Van De Wiel

Parham Yaghoobi

Jeroen Hubert Rommers

Wendelin Johanna Maria Versteeg

Fernando Brizuela

Rob Carlo Wieggers

Umesh Prasad Gomes

Elena Nedanovska

Celal Korkmaz

Alexander Downn Kim

Qiushi Zhu

Erik Roelof Loopstra

Tjarko Adriaan Rudolf Van Empel

Gerardus Hubertus Petrus Maria Swinkels

Han-Kwang Nienhuys

Leon Martin Levasier

Bernardus Antonius Johannes Luttikhuis

Dzmitry Labetski

Yuri Johannes Gabriël Van De Vijver

Hendrikus Gijsbertus Schimmel

Maurice Willem Jozef Etiënne Wijckmans

Petrus Rutgerus Bartray

Josephus Jacobus Smits

Marc Antonius Maria Haast

Johannes Bernardus Ridder

Alexander Marinus Arnoldus Huijberts

Dennis Jozef Maria Paulussen

Hans Johannes Maria Freriks

Anthonie Aantjes

Hugues Poincelin

Fransiscus Theresia Noel Heusschen

Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

Prolonging optical element lifetime in an EUV lithography system

Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber () containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

A lithographic apparatus is disclosed that includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate, a vacuum chamber through which the patterned beam of radiation is projected during use, and a purge system configured to provide a purge gas flow in the chamber.

Lithographic apparatus, a projection system and a device manufacturing method

The invention relates to a method for determining a suppression factor of a suppression system. The suppression system is arranged to suppress migration of a contaminant gas out of a first system. The suppression factor is an indication of the performance of the suppression system. The method includes introducing a tracer gas in the sub-system, providing a detection system configured to detect the amount of tracer gas that has migrated out of the first system, determining a first suppression factor for the suppression system for the tracer gas. The method further includes determining a second suppression factor for the suppression system for the contaminant gas based on the first suppression factor.

Method and system for determining a suppression factor of a suppression system and a lithographic apparatus

A lithographic apparatus includes a projection system configured to project a patterned beam of radiation onto a substrate. The projection system being provided with an opening through which the patterned beam of radiation may pass. At least part of the opening comprises a sloped surface of a wall of the projection system and a sloped surface of a mirror of the projection system.

Lithographic apparatus configured to suppress contamination from passing into the projection system and method

A lithographic apparatus includes a projection system configured to project an image onto a substrate, a substrate table configured to support the substrate, a first chamber that at least partially surrounds the projection system, and a second chamber that at least partially surrounds the substrate table and a first frame. The apparatus includes a base frame configured to support the second chamber, and an intermediate frame coupled to the base frame. The intermediate frame is configured to separate the first chamber and the second chamber. The apparatus includes a support coupled to the first frame. The support is configured to support the first chamber through a coupled opening in the intermediate frame and the second chamber.

Lithographic apparatus and device manufacturing method

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Eindhoven, Netherlands

Peter Gerardus Jonkers