Nxp B.v.

Epcos Ag

Ams International Ag

Taiwan Semiconductor Manufacturing Comp. Ltd.

Koninklijke Philips Corporation N.v.

Soundcell Holding B.v.

Technische Universiteit Delft

Wageningen Universiteit

Philips Intellectual Property & Standards Gmbh

Peter G Steeneken

Jozef Thomas Martinus Van Beek

Martijn Goossens

Hilco Suy

Klaus Reimann

Olaf Wunnicke

Willem Frederik Adrianus Besling

Kim Phan Le

Casper Van Der Avoort

Roel Daamen

Jan Sonsky

Evelyne Gridelet

Coenraad Cornelis Tak

Jozef T M Van Beek

Reinout Woltjer

Willem Besling

Gerard Koops

Jozef Van Beek

Theodoor Rijks

Herbert Lifka

Kevin Robert Boyle

Dirk Hente

Radu Surdeanu

Anco Heringa

Joseph Hendrik Anna Maria Jacobs

Remco Henricus Wilhelmus Pijnenburg

Wolfgang Otto Budde

Hendrik Johannes Bergveld

Luc Van Dijk

Gerhard Koops

Arnoud Pieter Van Der Wel

Volker Van Elsbergen

Peter Van De Weijer

Twan Van Lippen

Marten Oldsen

Maarten Jacobus Swanenberg

Rameswor Shrestha

Henk Boezen

Heiko Pelzer

Theodoor Gertrudis Silvester Maria Rijks

Astrid Lewalter

Antonius J M De Graauw

Jeroen Bielen

Martijn Bredius

Alessandro Ferrara

Cornelis Dekker

Theodoor G S M Rijks

Remco Pijnenburg

Rodolf Herfst

William Frederick Adrianus Besling

Frans Bontekoe

Theo Rijks

Farbod Alijani

Ireneusz Eugeniusz Roslon

Aleksandre Japaridze

Gerard Jan Verbiest

Priscila Rocío Malcolm Matamoros

Martin Elias Kaiser

Satadal Dutta

A motion detector adapted to detect activity of extremely small scale organisms, such as micro-organisms, bacteria and fungi, and even of viruses and genetic material, such as DNA and RNA. The motion detector is capable of detecting nano-motion, that is, motion in the order of nanometers or less.

2D material detector for activity monitoring of single living micro-organisms and nano-organisms

Aspects of the present disclosure are directed to force sensors. As may be implemented in accordance with one or more embodiments, an apparatus includes a force-responsive component having a resonant frequency, and a circuit that compensates for variations with the force-responsive component. The force-responsive component moves in response to an applied force, in accordance with a spring constant that is susceptible to fluctuation. The compensation circuit determines Brownian motion of the force-responsive component at the resonant frequency based on temperature, and generates an output based on the determined Brownian motion and movement of the force-responsive component. Such an output is indicative of force applied to the apparatus.

Force sensor with compensation

Consistent with an example embodiment, a user (touch screen) interface has haptic feedback. The user interface comprises, a substrate, a transparent bottom electrode on top of the substrate, a transparent wrinkling layer on top of the transparent bottom electrode, a transparent top electrode on top of the transparent wrinkling layer; and a transparent protective surface on top of the transparent top electrode. The transparent wrinkling layer changes from a smooth surface to a roughened surface upon application of a voltage between the top electrode and the bottom electrode; the voltage generates an electrostatic force mutually attracting the top and bottom electrodes to exert a compressive force upon the transparent wrinkling layer sufficient to generate a degree of surface wrinkling that is perceptible to the touch.

Haptic feedback and capacitive sensing in a transparent touch screen display

A pressure sensor measures pressure by measuring the deflection of a MEMS membrane using a capacitive read-out method. There are two ways to implement the invention. One involves the use of an integrated Pirani sensor and the other involves the use of an integrated resonator, to function as a reference pressure sensor, for measuring an internal cavity pressure.

MEMS capacitive pressure sensor

Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and at least two regions of second semiconductor material that are alternatively interleaved. Additionally, the apparatuses, methods, and systems include a first electrode and a second electrode that can operate both as a source and drain. The apparatuses, methods, and systems also include a first gate electrode having multiple portions on the first semiconductor material and a second gate electrode having multiple portions on the second semiconductor material that bidirectionally control current flow between the first electrode and the second electrode.

Apparatuses and methods including a superjunction transistor

A capacitive MEMS structure comprising first and second opposing capacitor electrode arrangements, wherein at least one of the electrode arrangements is movable, and a dielectric material located adjacent to the second electrode arrangement, wherein the second electrode arrangement is patterned such that it includes electrode areas and spaces adjacent to the electrode areas, and wherein the dielectric material extends at least partially in or over the spaces.

Tunable MEMS capacitor

Various exemplary embodiments relate to a pressure sensor including a pressure sensitive membrane suspended over a cavity, wherein the membrane is secured by a set of anchors to a substrate; and a getter material embedded in the membrane, wherein the surface of the getter is in contact with any gas within the cavity, and wherein two end points of the getter material are attached through the substrate by anchors capable of conducting through the substrate an electrical current through the getter material.

Pressure sensor with geter embedded in membrane

One example discloses a MEMS device, including: a cavity having an internal environment; a seal isolating the internal environment from an external environment outside the MEMS device; wherein the seal is susceptible to damage in response to a calibration unsealing energy; wherein upon damage to the seal, a pathway forms which couples the internal environment to the external environment; and a calibration circuit capable of measuring the internal environment before and after damage to the seal.

MEMS device calibration

In one or more embodiments, circuitry is provided for isolation and communication of signals between circuits operating in different voltage domains using capacitive coupling. The capacitive coupling is provided by one or more capacitive structures having a breakdown voltage that is defined by way of the various components and their spacing. The capacitive structures each include three capacitive plates arranged to have two plates located in an upper layer and one plate located in a lower layer. A communication signal can be transmitted via the capacitive coupling created between the lower plate and each of the upper plates, respectively.

Interface for communication between voltage domains

A MEMS pressure sensor wherein at least one of the electrode arrangements comprises an inner electrode and an outer electrode arranged around the inner electrode. The capacitances associated with the inner electrode and the outer electrode are independently measured and can be differentially measured. This arrangement enables various different read out schemes to be implemented and also enables improved compensation for variations between devices or changes in device characteristics over time.

MEMS capacitive pressure sensor, operating method and manufacturing method

A circuit for protecting a transistor is disclosed. The circuit includes a temperature sensing device coupled to the transistor and a tunable clamping circuit connected between transistor terminals, wherein the tunable clamping circuit is configured to provide an adjustable clamping voltage. A temperature controller coupled to the temperature sensing device and the tunable clamping circuit is also included. The temperature controller is configured to trigger a change in a clamping voltage of the tunable clamping circuit based on a feedback from the temperature sensing device.

Sensor controlled transistor protection

An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.

Integrated circuits separated by through-wafer trench isolation

The present invention provides a capacitive MEMS device comprising a first electrode lying in a plane, and a second electrode suspended above the first electrode and movable with respect to the first electrode. The first electrode functions as an actuation electrode. A gap is present between the first electrode and the second electrode. A third electrode is placed intermediate the first and second electrode with the gap between the third electrode and the second electrode. The third electrode has one or a plurality of holes therein, preferably in an orderly or irregular array. An aspect of the present invention integration of a conductive, e.g. metallic grating as a middle (or third) electrode. An advantage of the present invention is that it can reduce at least one problem of the prior art. This advantage allows an independent control over the pull-in and release voltage of a switch.

RF MEMS switch with a grating as middle electrode

Various embodiments relate to a pressure sensor and related methods of manufacturing and use. A pressure sensor may include an electrical contact included in a flexible membrane that deflects in response to a measured ambient pressure. The electrical contact may be separated from a signal path through a cavity formed using a sacrificial layer and PVD plugs. At one or more defined touch-point pressure thresholds, the membrane of the pressure sensor may deflect so that the state of contact between an electrical contact and one or more sections of a signal path may change. In some embodiments, the change of state may cause the pressure sensor to trigger an alarm in the electrical circuit. Various embodiments also enable the operation of the electrical circuit for testing and calibration through the use of one or more actuation electrode layers.

Pressure sensor with pressure-actuated switch

Growing community of inventors

Valkensward, Netherlands

Peter G Steeneken