Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Ams-osram International Gmbh

Peter Fuchs

Hubert Halbritter

Bruno Jentzsch

Martin Rudolf Behringer

Alvaro Gomez-Iglesias

Christian Lauer

Ann Russell

Dean Maximilian Schoke

Tomasz Swietlik

Thomas Falck

According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance Rof the first resonator mirror is wavelength-dependent, so that Ror a product R of Rand the reflectance Rof the second resonator mirror in a wavelength range decreases from a target wavelength λof the laser to λ+Δλ from a value R, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.

Semiconductor laser and LIDAR system and also laser system with the semiconductor laser

An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

An edge emitting semiconductor laser and a method for operating an edge emitting semiconductor laser are disclosed. In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having an active zone configured to generate laser radiation from the material system AlInGaAs, a facet on the semiconductor layer sequence configured to couple-out and/or reflect the laser radiation and a protective layer sequence directly on the facet protecting the facet from damage, the protective layer sequence including a monocrystalline starting layer of a group 12 group 16 material, an intermediate layer of Si and at least one finishing layer consisting essentially of Al, Si and/or Ta and of O and optionally of N, so that the finishing layer is of a different material system than the starting layer and the intermediate layer, wherein the intermediate layer is oxidized on a side facing the finishing layer, and wherein the protective layer is arranged in a direction away from the semiconductor layer sequence in the indicated order.

Edge emitting semiconductor laser and method of operating such a semiconductor laser

Growing community of inventors

Wuppertal, Germany

Peter Fuchs