E.i. Dupont De Nemours and Company

Other

U.S. Philips Corporation

Samsung Display Co., Ltd.

Peter Francis Carcia

Robert Scott McLean

Richard Dale Kinard

Kirstin H Shilkitus

Roger Harquail French

Velliyur Nott Rao

Calixto Estrada

Brian C Auman

George E Heinsohn

Ioannis V Bletsos

Christopher Dennis Simone

Geoffrey Nunes

Robert D Shannon

Eugene Michael McCarron

Wouter Bastiaan Zeper

Friedrich J Den Broeder

Laurent Dieu

Franklin D Kalk

Dimitri N Staikos

Richard A Wessel

Willem F Godlieb

Franciscus J Greidanus

Robert S Mclean

A cassette for supporting a film during a gaseous vapor deposition process includes a central shaft having first and second end plates. A rib on each end plate forms a spiral groove able to accept an edge of a film. Each rib has a cross sectional configuration having substantially linear major edges, a predetermined width dimension and a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The rib could be substantially rectangular with an optional flow spoiler at the free end or substantially wedge-shaped. The interspoke spacing between end plates is at least three hundred millimeters (300 mm) and is also greater than the width dimension of a film substrate at a gaseous deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the interspoke spacing.

Film cassette for gaseous vapor deposition

A vapor deposition apparatus includes an insert within which a material is deposited on the surface of a film. A cassette includes end plates each having a rib that edgewise receive a spiral wrapping of a film at least 300 mm wide. Spaces between turns of the wrapping define a gas flow channel and spaces between adjacent turns of one rib define inlet openings that communicate with the channel. Each rib has a predetermined width dimension, a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The spacing between end plates is at least 300 mm and is also greater than the film width at deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the end plate spacing. A diverging flow director contacts one end plate to directing gaseous fluid toward the inlet openings in that end plate.

Apparatus for gaseous vapor deposition

A cassette for supporting a film during a gaseous vapor deposition has first and second end plates. A rib on each end plate forms a spiral groove that edgewise receives a spiral wrapping of a film having a width greater than 300 mm. Spaces between turns of the film wrapping define a gas flow channel and spaces between adjacent turns of the rib define a plurality of inlet openings in one end plate that communicate with the channel. Each rib has a predetermined width dimension, a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The spacing between end plates is at least three hundred millimeters (300 mm) and is also greater than the width dimension of a film substrate at a gaseous deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the end plate spacing.

Loaded film cassette for gaseous vapor deposition

Gas permeation barriers can be deposited on plastic or glass substrates by atomic layer deposition (ALD). The use of the ALD coatings can reduce permeation by many orders of magnitude at thicknesses of tens of nanometers with low concentrations of coating defects. These thin coatings preserve the flexibility and transparency of the plastic substrate. Such articles are useful in container, electrical and electronic applications.

Barrier films for plastic substrates fabricated by atomic layer deposition

A durable metallized moisture vapor permeable sheet is formed by coating a moisture vapor permeable sheet with at least one metal coating comprising a layer of a corrosion resistant metal or a plurality of metal layers having differing compositions. The metallized moisture vapor permeable sheet material is suitable for use as a building construction wrap such as roof lining and house wrap, and as EMF radiation shielding material.

Breathable low-emissivity metallized sheets

Perfluorinated polyimides (and co-polyimide) compositions, particularly films are disclosed, comprising at least 50 mole percent of a polymeric repeat unit derived from contacting 3,3',4,4&#x2032;-biphenyltetracarboxylic dianhydride (BDPA) and 2,2&#x2032;-bis(trifluoromethyl) benzidine (TFMB) monomers. The perfluorinated polyimide (and co-polyimide) films of the invention have an in-plane coefficient of thermal expansion (CTE) between &#x2212;5 and +20 ppm/&#xb0; C. and a average light transmittance percent of from about 65.0 to about 99.0 (on a 75-micron thick film basis). The films of the present invention were converted to a polyimide using a chemical conversion method instead of typically employed thermal conversion step thus yielding these desirable properties. The films of the present invention can be an excellent substrate in an optical display device and can be used to replace rigid glass substrates. Finally, the polyimide films of the invention can also be used to manufacture flexible display devices (e.g., cellular phones, personal digital assistants, portable video games, laptops, and the like).

Low color polyimide compositions useful in optical type applications and methods and compositions relating thereto

This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them.

Transparent oxide semiconductor thin film transistor

Transistors fabricated with transparent oxide semiconductors are provided. The semiconductors are metal oxides deposited without the intentional incorporation of additional doping elements, and enable the fabrication of transparent thin film transistors. The transparent transistors can be used to control pixels in a display, without significantly reducing the active area of the pixels.

Transparent oxide semiconductor thin film transistors

The present invention relates to a device having a flexible organic electronic device comprising in the order listed:

Flexible organic electronic device with improved resistance to oxygen and moisture degradation

An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MO C N compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in a single layer or a multiple layer configuration.

Ion-beam deposition process for manufacture of binary photomask blanks

An ion-beam deposition process for fabricating attenuating phase shift photomask blanks, capable of producing a phase shift of 180&deg;, and which can provide tunable optical transmission at selected lithographic wavelengths <400 nm, comprising at least one layer of material of general formulae MzSiOxNy or MzAlOxNy, is described.

Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks

Flexible composite barrier structures are used to improve the resistance, to oxygen and moisture degradation, of an organic electronic device including at least one active layer comprising an organic material.

Disclosed are attenuating embedded phase shift masks capable of producing a phase shift of 180&deg; with an optical transitivity of at least 0.001 at a selected lithographic wavelength less than 200 nm. The masks are comprised of distinct contiguous alternating contiguous layers of an optically transparent material consisting essentially of an oxide selected from the group consisting of oxides of Al and Si and layers. of an optically absorbing material consisting essentially of a nitride selected from the group consisting of nitrides of Al and Si. Such masks are commonly known in the art as attenuating (embedded) phase shift masks or half-tone phase shift masks.

Multilayer attenuating phase-shift masks

Attenuating embedded phase shift photomask blanks capable of producing a phase shift of 180.degree. and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths &lt;400 nm comprise at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound at selected lithographic wavelengths &lt;400 nm and are made by depositing at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound onto a substrate.

Attenuating embedded phase shift photomask blanks

Attenuating embedded phase shift photomask blanks capable of producing a 180.degree. phase shift with an optical transmissivity of at least 0.0001 at wavelengths &lt;400 nm comprise alternating layers, either periodic or aperiodic, of an optically transmissive material and an optically absorbing material and are made by depositing alternating layers of optically transmissive material and optically absorbing material on a substrate, preferably by vapor deopsition.

Growing community of inventors

Wilmington, DE, United States of America

Peter Francis Carcia