Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

International Business Machines Corporation

Tu Dresden

Technische Universitát Dresden

Peter Frach

Klaus Goedicke

Hendrik Walde

Torsten Winkler

Volker Kirchhoff

René De La Barré

Gerhard Schottner

Matthias Fahland

Jonathan Reschke

Arno Seeboth

Rainer Labitzke

Hagen Bartzsch

Manfred Muller

Michael Junghahnel

Dieter W Meyer

Christian Gottfried

Harald Strecker

Daniel Glöss

Friedel Haese

Detlef Lötzsch

Stephan Barth

Daniel Glöß

Jan Hildisch

Matthias Gittner

Christian Rabe

Johanna Fischer

Roland Bartmann

Kerstin Täschner

Michael VERGÖHL

Pierre Pötschick

A method is provided for depositing a layer on a substrate inside a vacuum chamber by a magnetron sputtering device comprising at least two magnetron cathodes, each equipped with one target, at least one additional electrode, wherein a separate power supply unit is allocated to each magnetron cathode and wherein, in addition to at least one working gas, at least one reactive gas is introduced into the vacuum chamber. In a first phase, a pulsed negative direct current voltage is conducted from each power supply unit to the corresponding magnetron cathode, wherein the power supply units are operated in the push-pull mode. In a second phase, the pulsed direct current voltages provided by the power supply units are switched between the corresponding magnetron cathode and the additional electrode. An electric voltage is applied to the substrate or an electrode at the back of the substrate.

Method for depositing a layer using a magnetron sputtering device

A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets&#x2014;of which at least one target contains aluminum&#x2014;within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlNO, where (0.1&#x2264;X&#x2264;1.2); (0.1&#x2264;Y&#x2264;1.2) and (0.001&#x2264;Z&#x2264;0.1).

Method for depositing a piezoelectric film containing AIN, and a piezoelectric film containing AIN

Reactive sputtering process

A procedure and apparatus for the application of carbon layers using reactive magnetron sputtering is described. The process includes sputtering of at least two targets made of carbon in a reactive atmosphere with a pulsed energy feed. During a pattern period of the pulses all targets (magnetrons) are once switched on as an anode and at least one target is switched as an anode at all times Various embodiments include detection and limitation of the 'microarcs'; executing of regeneration processes according to fixed predetermined time intervals for at least 5 seconds. In one embodiment a microarc is detected on a magnetron and if a next pulse-off time is more than a selected time period away, then the magnetron is connected to a positive pole of the power supply. In another embodiment of the invention a pulsed negative voltage is applied to a substrate being sputtered by connecting the substrate to a negative pole of a pulsed power supply having a positive pole connected to a positive pole of a power supply for a magnetron. In another embodiment of the invention there is an electrode insulated from an installation mass which is connected to at least one positive pole of a power supply during the periodic pausing sputtering of substrates for regeneration.

Magnetron sputtering method and apparatus utilizing a pulsed energy

Process and circuit for the bipolar pulse-shaped feeding of energy into

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Radeberg, Germany

Peter Frach