Robert Boschgmbh

Peter Flohrs

Hartmut Michel

Alfred Goerlach

Ning Qu

Wolfgang Feiler

Christian Pluntke

Klaus Heyers

Lothar Gademann

Anton Mindl

Robert Plikat

Klaus Heyke

Peter Urbach

Ulrich Nelle

Juergen Hartmann

A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

Semiconductor component

A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 &#x3bc;m.

Semiconductor power component and a method of producing same

A vertical semiconductor component has an integrated switching device, which delivers an electric value correlating with the rear potential. The semiconductor component includes a doping region with a hole, which is free of the doping atoms of the doping region. The hole, when properly sized and contacted, can supply an electric current correlating with the rear potential.

Integrated vertical semiconductor component

The composite hybrid semiconductor structure contains a support plate substrate (11) with a number of at least two support connector spots (13) and a semiconductor chip or semiconductor wafer substrate (10) with a number of at least two chip connector spots (16). The structures is distinguished by a respectively thermally and electrically conducting adhesive layer (13') on the surface of the support plate substrate (11) within the areas of the support connector spots (13), where the said substrates (10, 11) with the said connector spots (13, 16) placed opposite each other and in electrically conducting and mechanically firm connection have been brought into connection with each other by the said electrically conductive adhesive layers (13').

Hybrid circuit with an electrically conductive adhesive

The invention relates to a monolithically integrated semiconductor arrangement, where from the first main surface a first zone (p) and a second zone (n.sup.+) are diffused into a substrate (2), which is weakly doped (substrate region n.sup.-) under a first main surface (3) and is more strongly doped (substrate region n.sup.+) under a second main surface (4). An insulating passivation layer is attached to the first main surface (3), on top of which a metallic cover electrode (D) is located, which covers adjacent substrate regions (n.sup.-) and the edge areas of the first zone (p) and the second zone (n.sup.+). In accordance with the invention, at least one additional zone (.nu.) of the same type of conductivity as the associated zone (n.sup.+), but with weaker doping, is diffused in for increasing the break-through voltage, and is connected to the zone (n.sup.+), does not contact the other zone (p) and prevents the zone (n.sup.+) from directly bordering the substrate (n.sup.-) underneath the cover electrode (D).

Monolithically integrated semiconductor arrangement with a cover

Monolithic integrated semiconductor device

A monolithic integrated semiconductor device is described, wherein for the adjustment of the breakdown voltage a cover electrode (7) is disposed in the area of the pn-junctions and a corresponding potential is applied through a voltage divider (1) for adjusting the breakdown voltage. For maintaining a temperature independent breakdown voltage it is provided that the voltage divider (1) consists of resistors (R1, R2) in the form of diffused zones which have different doping levels. The resulting different temperature coefficients of the resistors (R1,R2) of the voltage divider cause a temperature dependent potential change of the cover electrode potential, whereby a temperature stabilization of the breakdown voltage is obtained.

Monolithic integrated planar semiconductor system and process for making

Transistor arrangement with an output transistor

Monolithically integrated planar semiconductor arrangement

Darlington transistor circuit

Planar semiconductor structure breakdown voltage protection using

In a three-stage Darlington transistor circuit, the base of the middle transistor is connected to the series combination of a resistance and a Zener diode, with the Zener diode anode being connected to the resistance. A voltage divider is provided between the collector and emitter of the power transistor. For reducing the loading and deviation from nominal value of the voltage divider with change of temperature, an auxiliary transistor (T.sub.4) is provided having its base connected to one tap of the voltage divider and its emitter to the cathode of the Zener diode. The collector of the auxiliary transistor is provided in the integrated circuit substrate in common with the collectors of the transistors of the Darlington circuit. The other tap of the voltage divider is provided for emitter-collector clamping voltage purposes.

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Reutlingen, Germany

Peter Flohrs