Applied Materials, Inc.

Peter F Ebbing

Manoocher Birang

Jack Ford

Satish Sundar

Kien Nai Chuc

Michael N Sugarman

Bruno Strul

Richard De Geus

Petru N Nitescu

Peter G Panagas, Jr

A Fernando Benavides

Rakesh Prabhakar

Fred H Hariz

A substrate center-finding method and apparatus, for determining the center of a substrate being passed through a substrate handling chamber of a substrate processing system, includes any number of sensors arranged in any configuration and permits the substrate to pass through any trajectory that triggers the sensors. The locations of the sensors are calibrated by homing in on the sensors using a point, the reference point, near the tip of an arm assembly on a substrate handler. The substrate handler has an encoder for sensing the pivot angles of links in the arm assembly, whereby the coordinates of the reference point can be calculated from the angles and lengths of the links. When the substrate triggers a sensor, the location of the reference point is again calculated, and the coordinates of the trigger point on the edge of the substrate is determined relative to the reference point. A suitable number of trigger points on the edge of a circular substrate will define a circle, so the center of the circle can be calculated, and the location of the substrate can be adjusted to account for any offset from the reference point.

On the fly center-finding during substrate handling in a processing system

The present invention generally provides a robot that can transfer two workpieces, such as silicon wafers, simultaneously and at increased speeds and accelerations and decelerations. More particularly, the present invention provides a robot wrist associated with the robot arm for mechanically clamping a workpiece to a workpiece handling member attached to the arm. The wafer clamp selectively applies sufficient force to hold the workpiece and prevent slippage and damage to the workpiece during rapid rotation and linear movement of the handling member. In one embodiment, a clamp for securing silicon wafers uses two clamp fingers connected to a single flexure member to position and hold the wafer with minimal particle generation and wafer damage. The clamp is designed so that wafers are normally clamped except near fall extension of the workpiece handling member to deliver or pick up a wafer.

Substrate clamping apparatus

In an etch monitor system, a method and apparatus for adjusting the angle of incidence to normal between a laser beam and a reflective surface, such as a silicon wafer, includes a rotatable mirror having a pinhole formed therethrough, the rotatable mirror moveably mounted to be positioned in a first location within a light path and a second location out of said light path. When the rotatable mirror is located in the light path, the pinhole allows a beam of the laser beam to pass from a laser source to the reflective surface. If the beam is normal to the reflective surface, the beam is directed back toward the laser source through the pinhole. If the beam is not normal to the reflective surface, the beam is reflected by the rotatable mirror to a target, allowing observation on a lit spot of the target to enable normalization by making appropriate adjustments.

Method and apparatus for normalizing a laser beam to a reflective surface

An integrated heated conduit includes an inner conduit through which a fluid may be transferred. The inner conduit may also serve as a first electrical conductor, or an insulator may be provided on the outer surface of the conduit and a first electrical conductor may then be formed about the outer surface of this insulator. A polymeric, self-regulating heating element is provided on the outer surface of the first conductor. A second conductor is provided about the outer surface of the heating element to complete a current path across the heating element. The entire assembly may optionally be sheathed in an electrically and/or thermally insulating outer layer.

Electrically heated fluid carrying conduit having integrated heating

An apparatus for generating dry vapor includes a manifold assembly with a channel for conveying a liquid from a liquid source. A vessel for holding the liquid is secured to the manifold assembly and includes a fill tube connected to receive liquid from the manifold assembly's channel. A heater is provided for heating the liquid in the vessel to generate a vapor. A settling chamber is located within the vessel above the liquid in the vessel from settling out liquid drops in the vapor. The settling chamber includes a vapor inlet with a cross-section that is substantially smaller than the vessel's cross-section for receiving vapor. A vapor outlet removes dry vapor from the settling chamber.

Method and dry vapor generator channel assembly for conveying a liquid

A pneumatic circuit prolongs a pneumatic valve opening time using an accumulator with two quick exhaust type valves in series while providing a rapid valve closing time. This structure and method is self-contained and amenable to retrofit in existing installations without any external connections. Slow opening is achieved by routing inlet gas pressure simultaneously to an accumulator and the operating cylinder of the valve to be opened. A tortuous piping path and increased volume to be pressurized due to the addition of the accumulator substantially reduces the isolation valve opening time, thereby eliminating problems associated with quick opening of a pneumatic valve. When the pneumatic valve needs to be closed quickly, slight venting toward the inlet valve immediately causes the quick exhaust valves to vent their downstream pressure. The accumulator then vents through its quick exhaust valve while separately the main quick exhaust valve quickly vents the air cylinder of the pneumatic valve. Closing times penalties of less than 50 milliseconds can be achieved using this configuration and opening times can be increased by adjusting the volume of the accumulator.

Pneumatic circuit to provide different opening and closing speeds for a

An etch rate monitor for use with semiconductor wafer etching processes includes a source of light of normal incidence to the wafer surface through a window in the etching chamber. In a first embodiment, a Fresnel or positive lens is used to collect some of the diffraction orders caused by the repetitive patterns on the wafer surface which merge from the window. In alternate embodiments, a concave spherical mirror and/or a photodetector system are used to collect the diffraction orders. A collimating lens applies these diffraction orders of normal incidence to interference filters which reject plasma and ambient light and pass the diffraction orders to a photodetector to monitor etch rate as a function of the cycle period between interference minima or maxima caused by the difference in path length between the etched and not etched surfaces of the wafer.

Etch rate monitor using collimated light and method of using same

An inner lid is attached to a vacuum chamber, covering an inner region of the vacuum chamber. An outer lid, also attached to the vacuum chamber, covers the inner lid, leaving a region between the inner lid and the outer lid. A gas conduit allows gas to flow between the inner region of the vacuum chamber and the region between the inner lid and the outer lid. A filter is placed in or immediately outside the gas conduit to prevent particles from entering the inner region of the vacuum chamber from the region between the inner lid and the outer lid. Since the pressure is the same on the top and bottom of the inner lid, the inner lid does not flex and thus does not rub against the vacuum chamber when the vacuum chamber is pumped down or vented up.

Method and apparatus for reducing particulate generation caused by door

A semiconductor wafer is provided with magnetic material about the periphery for magnetically clamping the wafer on a seating gasket at the processing station. The seating gasket is annular for peripherally supporting the wafer. An electro-magnet establishes a peripheral station magnetic field which attracts the wafer magnetic material to form the clamp. The station magnetic field may by reversed to levitate the wafer onto and off of the seating gasket.

Magnetic semiconductor wafers with handling apparatus and method

A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: 1) scanning a semiconductor wafer with a narrowly focused laser beam; 2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; 3) parking the beam at the preferred spot; and 4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly responsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.

Method and apparatus for endpoint detection in a semiconductor wafer

Method of handling magnetic semiconductor wafers

A method and apparatus are described for inhibiting visual obstruction of the window of a semiconductor etch process chamber by deposition of each byproducts thereon by selectively heating the window surfaces adjacent one edge of the window to thereby form a cool region on the window surfaces adjacent the opposite edge of the window whereby the center of the window will remain substantially clear of such depositions. The apparatus for carrying out the method of the invention comprises a first heat transmitting structure disposed on one surface of an optically transparent window adjacent one edge, and a second heat transmitting structure disposed on the opposite surface of the optically transparent window adjacent the same edge to thereby provide even heating of both surfaces of the window adjacent the one edge, thereby creating a cooler zone on the window surfaces adjacent the opposite edge of the window.

Method and apparatus to inhibit obstruction of optical transmission

A method for focussing a radiant energy beam characterized by the steps of scanning a beam of radiant energy across a test pattern including areas of differing reflectivity, detecting the variance in a reflected portion of the scanned beam and adjusting the beam to minimize the variance. Preferably, the test pattern includes areas of varying widths, e.g. relatively non-reflective areas of varying widths separated by reflective areas of uniform widths. As the beam is scanned perpendicularly across the test pattern it will be highly reflected by the reflective areas and will be partially absorbed by the non-reflective areas. If the beam is wider than a non-reflective area a portion of the beam will be absorbed and a portion of the beam will be reflected, resulting in a greater total reflection than if the beam is narrower than the non-reflective region. In consequence, the intensity of the reflected beam will vary as the energy beam is scanned across the test pattern as it encounters non-reflective areas of varying widths. The amount of variance in the reflected beam is related to the width of the beam and, therefore, the beam can be focussed by adjusting the beam to minimize this variance.

A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: (1) scanning a semiconductor wafer with a narrowly focussed laser beam; (2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; (3) parking the beam at the preferred spot; and (4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly reponsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.

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Los Altos, CA, United States of America

Peter F Ebbing