Hanwha Q Cells Gmbh

Q-cells Se

Peter Engelhart

Wilhelmus Mathijs Marie Kessels

Robert Seguin

Gijs Dingemans

Maximilian Scherff

Markus Träger

Ansgar Mette

Sven Wanka

Max Köntopp

Matthias Heimann

Bernhard Kloter

Maximillian Scherff

Stefan Bordihn

Til Bartel

Andrey Stekolnikov

Florian Stenzel

Bernhard KLÖTER

A solar cell comprising: a semiconductor substrate; a metallization paste on a surface of the semiconductor substrate; and a tunneling layer between the substrate surface and the metallization paste.

Solar cell and solar cell manufacturing method

A solar cell includes a semiconductor layer, a collecting layer for collecting free charge carriers from the semiconductor layer and a buffer layer which is arranged between the semiconductor layer and the collecting layer. The buffer layer is designed as a tunnel contact between the semiconductor layer and the collecting layer. The buffer layer essentially includes a material with a surface charge density of at least 10cm, preferably of at least 5&#xd7;10cm, and more preferably of at least 10cm.

Solar cell

A solar cell includes a semiconductor wafer, at least one dielectric layer arranged on the semiconductor wafer, a metal layer arranged on the dielectric layer, and a contact structure arranged in the dielectric layer such that the contact structure provides an electrical connection between the metal layer and the semiconductor wafer. The contact structure has at least one first structure having a minimum dimension and at least one second structure having a maximum dimension, wherein the minimum dimension and the maximum dimension are defined along a surface of the semiconductor wafer and the minimum dimension of the first structure is greater than the maximum dimension of the second structure.

Solar cell and method for producing same

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

Semiconductor device, in particular solar cell

The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

A process for producing a semiconductor device comprises the following process steps: provision of a semiconductor substrate (); formation of a functional layer () on a semiconductor surface () of the semiconductor substrate (); and production of at least one doped section () on the semiconductor surface () by driving a dopant into the semiconductor substrate () from the functional layer (). The functional layer () is formed in such a way that it passivates the semiconductor surface (), acting as a passivation layer upon completion of the semiconductor device.

Production process for a semi-conductor device and semi-conductor device

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Hameln, Germany

Peter Engelhart