Tomophase Corporation

Gte Laboratories Incorporated

US Government As Represented by the Secretary of the Army

Corning Applied Technologies Corporation

Peter E Norris

Xiao-Li Li

Feiling Wang

Andrey Vertikov

Andrei Vertikov

Robert J Regan

Craig A Armiento

H Paul Maruska

Richard H Wittstruck

Thomas R Aucoin

Peter A Zawadzki

Jing Zhao

William R Baarck

Long De Zhu

Techniques, apparatus and systems that use an optical probe head to deliver light to a target and to collect light from the target for imaging and monitoring a target while a separate radiation is applied to treat the target.

Temperature profile mapping and guided thermotherapy

Optical devices and techniques for imaging and measuring targeted objects, e.g., tissues.

Optical tissue imaging based on optical frequency domain imaging

Designs, implementations, and techniques for optically measuring a sample to obtain spectral absorbance map of the sample. Light at different wavelength bands may be used to detect different absorption features in the sample. Multiple light sources may be used including tunable lasers.

Cross-sectional mapping of spectral absorbance features

Devices and techniques for thermotherapy based on optical imaging.

Image-guided thermotherapy based on selective tissue thermal treatment

Designs, implementations, and techniques for optically measuring a sample and integrated systems that provide CT-scan, optical probing and therapy by electromagnetic radiation treatment (e.g. laser, RF, or microwave). Light at different wavelength bands may be used to detect different absorption features in the sample. Multiple light sources may be used including tunable lasers.

Integrated disease diagnosis and treatment system

A single crystal thin film of the compound ZnSi,Ge,N,(where x can range from 0 to 1). This thin film single crystal can be disposed on a single crystal substrate made of, for example, sapphire, silicon carbide, lithium gallate or silicon with or without an additional GaN buffer layer grown on them. Alternately, a GaN single crystal thin film grown on any substrate can be used. In the case of sapphire, it can be R-plane so that the thin film has its c-axis lying within the thin film or A- or C-plane so that the thin film has its c-axis perpendicular to the substrate. The substrate could also be any substrate with a GaN single crystal thin film deposited on it. ZnSi,Ge,N,single crystal thin films can be made by the MOCVD method using suitable precursors, molar injection ratios, and substrate temperatures. It is possible to make various optical, electro-optical or electronic devices with the material, for example, a second harmonic generator emitting blue light.

Nitride based semiconductors and devices

The present invention provides for a chemical vapor deposition reactor cher which is fitted with a rotatable and vertically movable susceptor/wafer carrier. The susceptor/wafer carrier, which is a large diameter disk, provides the reactor with the capability of varying the plasma-substrate distance. As those skilled in the art will appreciate, such a susceptor allows high deposition rates to be achieved for a given power level because the flux of the reactant can be increased due to the high speed rotation which will decrease boundary layer thickness during growth. The ability to adjust the source-substrate distance gives more flexibility than fixed dimensional systems. Further, it allows damage in the thin films to be minimized by simple adjustments to the susceptor/wafer carrier. Because the damage to the thin films is minimized, it makes pulsed operation practical and therefore, the films may be grown in an atomic layer epitaxy mode to produce films of high quality and uniformity.

Method and apparatus for depositing a refractory thin film by chemical

Apparatus for supporting a group of optical fibers in proper alignment with associated laser devices and rear-facet photodetectors. The photodetectors and grooves for supporting the optical fibers are fabricated in a carrier member of device quality silicon. An array of a row of laser devices is moved laterally along a slot in the carrier member transverse to the grooves so as to align each laser device with a groove and with a photodetector. One or more carrier members may be mounted on a supporting structure adapted to receive them.

Mounting apparatus for optical fibers and lasers

Method of fabricating a monolithic integrated circuit structure incorporating a complementary pair of GaAs/AlGaAs modulation-doped field effect transistors (MODFET's) including providing a substrate of semi-insulating GaAs, depositing an epitaxial layer of undoped AlGaAs on its surface, and ion-implanting a heavily doped N-type donor region and a heavily doped P-type acceptor region in the undoped AlGaAs. A thin spacer layer of undoped AlGaAs is epitaxially deposited on the previously deposited AlGaAs layer, and an epitaxial layer of undoped GaAs is deposited on the spacer layer. First and second gate members which form Schottky barriers with the GaAs are placed on the GaAs layer overlying portions of the N-type donor region and P-type acceptor region, respectively. N-type source and drain zones are formed in the GaAs layer on opposite sides of the first gate member, and P-type source and drain zones are formed in the GaAs layer on opposite sides of the second gate member. A first MODFET is provided by the N-type donor region, the N-type source and drain, the region of undoped GaAs between the source and drain which form a two-dimensional electron gas region, and the first gate member. A second MODFET complementary to the first is provided by the P-type acceptor region, the P-type source and drain, the region of undoped GaAs between the source and drain which form a two-dimensional hole gas region, and the second gate member.

Fabrication of complementary modulation-doped filed effect transistors

An enhanced mobility buried channel transistor structure in which the quasi-two-dimensional electron gas (2DEG) which forms the conducting channel in the structure is removed from the proximity of the heterointerface, and is placed in a region remote therefrom. A 'tapered' layer of Al.sub.x Ga.sub.1-x As is provided, where x varies from maximum to minimum as the interface with an undoped layer of GaAs is approached.

Growing community of inventors

Cambridge, MA, United States of America

Peter E Norris