Texas Instruments Corporation

Raytheon Ti Systems, Inc.

Peter D Dreiske

Arthur Monroe Turner

Sebastian R Borrello

David I Forehand

Chang-Feng Wan

A multiple color infrared detector is provided which is formed from a photodiode (13), a photoconductor (24), and an insulating layer of material (20) disposed between the photodiode (13) and the photoconductor (24). The photodiode (13) detects infrared radiation in the spectral band between about 3 .mu.m and about 5 .mu.m, and the photoconductor (24) detects infrared radiation in the spectral band between about 8 .mu.m and about 13 .mu.m

Multiple color infrared detector

This invention relates to a process and structure for performing a high temperature or other process on both sides of a thin slice of material or die prior to being placed onto a integrated circuit or multi-chip module. In a particular embodiment, a process and structure is given to provide for double sided interdiffusion for passivation of a Mercury Cadmium Telluride (MCT) film which is mounted to a read-out integrated circuit (ROIC) face side up in order to fabricate vertically integrated Focal Plane Arrays (FPAs) with reduced dark currents and improved performance. The process of the present invention also allows for the insertion of novel materials such as Double Layer Heterojunction (DLHJ), MBE, MOCVD, etc. in the vertical integrated approach to FPAs.

Double sided interdiffusion process and structure for a double layer

A multiple color infrared detector is provided which is formed from a photodiode (13), a photoconductor (24), and an insulating layer of material (20) disposed between the photodiode (13) and the photoconductor (24). The photodiode (13) detects infrared radiation in the spectral band between about 3 .mu.m and about 5 .mu.m, and the photoconductor (24) detects infrared radiation in the spectral band between about 8 .mu.m and about 13 .mu.m.

A substantial portion of the material at the pn junction (27) of the photodiode (37, 41) having an implanted region extending to a surface thereof is selectively removed (39), leaving a very small junction region (35, 43) with the remainder of the p-type (23) and n-type (25) material of each photodiode being spaced apart or electrically isolated at what was originally the junction. In the ion implanted n-type on p-type approach, the majority of the signal is created in the implanted n-type region while the majority of the noise is generated in the p-type region. By selectively removing p-type material, n-type material or both from the pn junction of the diode or otherwise electrically isolating most of the p-type and n-type regions from each other at the pn junction and thereby minimizing the pn junction area, noise is greatly reduced without affecting the signal response of the photodiode. With this approach, the present implant technology can still be used with the achievement of high temperature operational capability above 77.degree. Kelvin and up to about 110.degree. Kelvin.

Geometric enhancement of photodiodes for low dark current operation

Method of making photodiodes for low dark current operation having

A method and apparatus for improving photoconductor signal output is provided in which a photon collection aperture receives photons. Charge carriers are generated in response to the photons in a charge generation region. These charge carriers are conducted through a confinement region coupled to the charge generation region. The cross-sectional area of the confinement region is less than that of the charge generation region.

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Plano, TX, United States of America

Peter D Dreiske