Globalwafers Co., Ltd.

Memc Electronic Materials, Inc.

Sunedison Semiconductor Limited (uen201334164h)

Sunedison, Inc.

Sunedison Semiconductor Limited

Peter D Albrecht

Robert J Falster

Vladimir V Voronkov

John Allen Pitney

Sumeet S Bhagavat

Roland R Vandamme

Henry Frank Erk

Vandan Tanna

Thomas E Doane

Guoqiang (David) Zhang

Eugene R Hollander

Judith A Schmidt

Uwe Hermes

Ezio Bovio

Guoqiang David Zhang

Carlo Zavattari

Alex Chu

Giovanni Negri

David Louis Vadnais

Paride Corbellini

Marco Morganti

Ashley Samuel Hull

Ichiro Yoshimura

Yunbiao Xin

Carlos Zavattari

Kenneth D Strittmatter

George W Greene

Rafael Hidalgo

Junnan Wu

Judy A Schmidt

Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink is measured. The parameter is compared to a baseline range.

Methods for implanting semiconductor structures with ions

Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Apparatus for stressing semiconductor substrates

Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Methods and system for controlling a surface profile of a wafer

Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. The measured amount of displacement of the sidewall is stored as displacement data. Based on the stored data, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.

Processes and apparatus for preparing heterostructures with reduced strain by radial compression

Processes and apparatus for preparing heterostructures with reduced strain by radial distension

A polishing head assembly for single side polishing of silicon wafers is provided. The polishing head assembly includes a polishing head and a cap. The polishing head has a recess along a bottom portion, the recess having a recessed surface. The cap is positioned within the recess, and has an annular wall and a floor extending across the annular wall. The floor is spaced from the recessed surface to form a chamber therebetween. The chamber is configured to be pressurized for deflecting the floor. The annular wall is attached to the polishing head with an adhesive.

Center flex single side polishing head having recess and cap

A platen for polishing a surface of a wafer has a reaction plate, a polishing plate, and a bladder. The reaction plate has a top and bottom surface, and defines a longitudinal axis. The polishing plate is positioned coaxially with the reaction plate. The polishing plate has a second top surface and a second bottom surface. The second top surface is adjacent to the bottom surface of the reaction plate. The bladder is coaxially located along a radially outer portion of either the top or bottom surface of the reaction plate. The bladder is connected with the polishing plate and able to expand to deform the polishing plate with respect to the bottom surface of the reaction plate.

Double side polisher with platen parallelism control

Systems and methods are disclosed for connecting an ingot to a wire saw with an ingot holder, a bond beam, and a bar. The bar has an angled mating surface that engages a recessed surface formed in a slot of the bond beam. Mechanical fasteners are used to connect the tee bar to the ingot holder. The angle of the mating surface with respect to the recessed surface of the slot prevents deformation of the bond beam and prevents compromising the integrity of the adhesive bond between the ingot and the bond beam.

Systems and methods for connecting an ingot to a wire saw

The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

Methods for etching the edge of a silicon wafer

Edge etched silicon wafers

Growing community of inventors

O'Fallon, MO, United States of America

Peter D Albrecht