Asml Holding N.v.

Asml Netherlands B.v.

Silicon Valley Group, Inc.

Peter Conrad Kochersperger

Daniel Nicholas Galburt

Roberto B Wiener

James Hamilton Walsh

David Ramirez

Arno Jan Bleeker

Justin Lloyd Kreuzer

Richard Joseph Bruls

Kars Zeger Troost

Dominicus Jacobus Petrus Adrianus Franken

Joseph Harry Lyons

Glenn Friedman

Frederick Michael Carter

Joseph Laganza

Rajan Mali

Stephen Roux

Han-Kwang Nienhuys

Yang-Shan Huang

Hendrikus Robertus Marie Van Greevenbroek

Robert Gabriël Maria Lansbergen

Martinus Agnes Willem Cuijpers

Richard Carl Zimmerman

Aage Bendiksen

Todd R Downey

Ronald Peter Albright

Victor Antonio Perez-Falcon

Frederick Kubick

George Hilary Harrold

Arun Mahadevan Venkataraman

Michal Emanuel Pawlowski

Jacob Brinkert

Elizabeth Stone

Arindam Sinharoy

Kirill Urievich Sobolev

Szilard Istvan Csiszar

Boris Kogan

Robert Jeffrey Wade

Christopher Michael Dohan

Olga Vladimirsky

Xugang Xiong

Marcel Joseph Louis Boonen

Shaun Evans

An inspection system includes a radiation source that generates a beam of radiation and irradiates a first surface of an object, defining a region of the first surface of the object. The radiation source also irradiates a second surface of the object, defining a region of the second surface, wherein the second surface is at a different depth level within the object than the first surface. The inspection system may also include a detector that defines a field of view (FOV) of the first surface including the region of the first surface, and receives radiation scattered from the region of the first surface and the region of the second surface. The inspection system may also include a processor that discards image data not received from the region of the first surface, and constructs a composite image comprising the image data from across the region of the first surface.

Method for region of interest processing for reticle particle detection

Embodiments herein describe methods, devices, and systems for a reticle gripper damper and isolation system for handling reticles and reducing vibrations in a reticle handler for lithography apparatuses and systems. A reticle handler apparatus includes a reticle handler arm, a reticle baseplate configured to hold the reticle, and a gripper arranged to connect the reticle baseplate to the reticle handler arm. The gripper includes a static structure that is coupled to the reticle handler arm, an isolation structure that is coupled to the static structure, and one or more damping elements. The gripper is configured to reduce vibrations of the reticle in the reticle handler apparatus using the one or more damping elements.

Reticle gripper damper and isolation system for lithographic apparatuses

Methods and systems are described for reducing particles in the vicinity of an electrostatic chuck () in which a cleaning reticle or substrate () is secured to the chuck, the cleaning reticle or substrate having surfaces partially devoid of conductive material so that an electric field from the chuck can pass through to a volume adjacent the substrate to draw particles () in the volume to the surface of the substrate. Voltage supplied to the chuck may have an alternating polarity to enhance the attraction of particles to the surface.

Apparatus for and method of in-situ particle removal in a lithography apparatus

A lithographic apparatus that includes an illumination system that conditions a radiation beam, a first stationary plate having a first surface, and a reticle stage defining, along with the first stationary plate, a first chamber. The reticle stage supports a reticle in the first chamber, and the reticle stage includes a first surface spaced apart from a second surface of the first stationary plate, thereby defining a first gap configured to suppress an amount of contamination passing from a second chamber to the first chamber. The first stationary plate is between the reticle stage and both the illumination system and a projection system configured to project a pattern imparted to the radiation beam by the patterning device onto a substrate.

Particle suppression systems and methods

A lithographic apparatus injects gas between a patterning device and a patterning device masking blade to help protect the patterning device from contamination. The gas may be injected into the space defined between the patterning device and the patterning device blade by one or more gas supply nozzles that are arranged on at least one side of the patterning device. The one or more gas supply nozzles are coupled to a frame which a patterning device support structure moves relative to. Each nozzle may be constructed and arranged to supply gas over at least the patterning region of the reflective patterning device.

Lithographic apparatus with a patterning device environment

An apparatus and a method to hold a patterning device configured to impart a beam of radiation with a pattern in its cross-section. The apparatus includes a base configured to support the patterning device and an inner cover couplable to the base. The inner cover includes a restraining mechanism that, upon an application of a force external to the inner cover, is configured to provide an in-plane force to the patterning device to restrain movement of the patterning device, the in-plane force being substantially parallel to a patterning surface of the patterning device.

Lithographic apparatus and device manufacturing method

A lithographic apparatus including a uniformity correction system is disclosed. The lithographic apparatus comprises an illumination system configured to condition a beam of radiation. The illumination system comprises a uniformity correction system located at a plane configured to receive a substantially constant pupil when illuminated with the beam of radiation. The uniformity correction system includes fingers configured to be movable into and out of intersection with a radiation beam so as to correct an intensity of respective portions of the radiation beam. A linear motor actuator arrangement drives the fingers to their respective appropriate positions to compensate for non-uniform illumination. Control is provided by a control system that precisely manipulates carriers of the fingers.

Linear motor and lithography arrangement including linear motor

A lithographic apparatus including a uniformity correction system is disclosed. Fingers move into and out of intersection with a radiation beam to correct an intensity of the radiation beam. Actuating devices are coupled to the fingers. A width of a tip of each of the fingers is half that of a width of the actuating devices. Systems and methods compensate for uniformity drift. An illumination slit uniformity caused by system drift is measured. First positions of uniformity compensators are determined based on the uniformity. Uniformity compensators are moved to the first respective positions. A substrate is exposed.

Lithographic apparatus and method for illumination uniformity correction and uniformity drift compensation

A maskless lithography system has a patterning array assembly formed by a plurality of patterning arrays, each patterning array having a substrate. Each patterning array has a plurality of individually controllable elements to endow an incoming radiation beam with a patterned cross-section. To reduce the global unflatness of the patterning array assembly that is oriented in a first plane, the position of at least one substrate of a patterning array is adjusted to a second orientation. Reduction of the global unflatness of the patterning array assembly reduces a telecentricity error without introducing additional error into the maskless lithography system.

Systems and methods are provides for measuring and correcting for a given telecentricity in a lithographic apparatus. A radiation beam is partitioned into a plurality of beams, each of which is modulated using an array of individually controllable elements and projected onto a portion of a substrate through a projection system. A set of alignment beams is transmitted simultaneously on paths similar to those traversed by the plurality of radiation beams, and a corresponding set of sensors respectively measures an angle and a position of the set of alignment beams proximate to an entrance of the projection system. An assembly of telecentricity control mirrors (TCM) adjusts appropriate ones of the plurality of radiation beams in response to the measurement to correct for any detected telecentricity errors.

Real time telecentricity measurement

A method and apparatus for correcting overlay errors in a lithography system. During lithographic exposure, features being exposed on the wafer need to overlay existing features on the wafer. Overlay is a critical performance parameter of lithography tools. The wafer is locally heated during exposure. Thermal expansion causes stress between the wafer and the wafer table, which will cause the wafer to slip if it exceeds the local frictional force. To increase the amount of expansion allowed before slipping occurs, the wafer chuck is uniformly expanded after the wafer has been loaded. This creates an initial stress between the wafer and the wafer table. As the wafer expands due to heating during exposure, the expansion first acts to relieve the initial stress before causing an opposite stress from thermal expansion. The wafer may be also be heated prior to attachment to the wafer chuck, creating the initial stress as the wafer cools.

Overlay correction by reducing wafer slipping after alignment

The present invention is directed to optical element damping systems. In particular, an eddy current damper is disclosed. The eddy current damper includes a rod, a series of conducting plates coupled to the rod, and layers of magnets. The alternating layers have alternating magnetic fields. When an optical element moves, the optical element will exert a force on the rod. The rod causes the conducting plates to move relative to the alternating layers of magnets to generate eddy currents within each of the conducting plates, such that the eddy currents damp the motion of an optical element. In an alternative embodiment, an eddy current damper motion amplifier is used to provide additional mechanical advantage that significantly increases the damping provided by the eddy current damper. Eddy current dampers are provided within conventional scanning lithography devices and optical maskless lithography devices to improve performance by stabilizing optical element motion.

Optical element damping systems

A choked-flow orifice gas gauge proximity sensor for sensing a difference between a reference surface standoff and a measurement surface standoff is disclosed. Unlike existing proximity sensors, the gas gauge proximity sensor of the present invention replaces the use of a mass flow controller with a choked flow orifice. The use of a choked flow orifice provides for reduced equipment cost and improved system reliability. A gas supply forces gas into the proximity sensor. The gas is forced through the choked flow orifice to achieve sonic conditions at which time the mass flow rate becomes largely independent of pressure variations. The flow of gas proceeds from the choked flow orifice into a sensor channel system. A mass flow sensor within the sensor channel system monitors flow rates to detect measurement standoffs that can be used to initiate a control action.

Pressure sensor

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Easton, CT, United States of America

Peter Conrad Kochersperger