University of California

North Carolina State University

Peter Christian Clausen

Jonathan S Lindsey

Werner G Kuhr

David F Bocian

Daniel Tomasz Gryko

Kristian M Roth

This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10bits/cm), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

High density memory device

This invention provides novel high density memory devices (FIG.) that are electrically addressable permitting effective reading and writing, that provide a high memory density (102), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices arc intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

High density non-volatile memory device

This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10,bits/cm,), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium comprising a storage molecule comprising a first subunit and a second subunit wherein the first and second subunits are tightly coupled such that oxidation of the first subunit alters the oxidation potential(s) of the second subunit rendering the oxidation potential(s) of the second unit different and distinguishable from the oxidation potentials of the first subunit.

Tightly coupled porphyrin macrocycles for molecular memory storage

The present invention provides high density, non-volatile memory devices incorporating winged trimers of porphyrinic macrocycles. In preferred embodiments, the two wing porphyrinic macrocycles are the same, and both are different from the center macrocycle. Such molecules are relatively easy to synthesize, have four different and distinguishable oxidation states, and thus provide molecules, information storage media and apparatus that store two bits of information.

High-density non-volatile memory devices incorporating thiol-derivatized porphyrin trimers

This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10,bits/cm,), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium comprising one or more thiol-derivatized porphyrins. The storage medium has a multiplicity of different and distinguishable oxidation states and data is stored in said oxidation states by the addition or withdrawal of one or more electrons from the storage medium via the electrically coupled electrode(s).

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Raleigh, NC, United States of America

Peter Christian Clausen