Apple Inc.

Peter Chang

Jerrold Von Hauck

Thomas P Mensch

Yiqun Zhu

Tiffany Shih-Yu Fang

John Thomas Perry

Tong Chen

Jason S Pelc

Chih-Wei Chuang

Mohamed Mahmoud

Muralidhar S Vempaty

Huiyang Deng

Han Jong Yu

Chiye K Kojima

Satyarth Suri

Anti-reflective optical structures are disclosed. The anti-reflective optical structures include sub-wavelength structures in order to produce one or more index of refraction gradients within the anti-reflective optical structures. The one or more index of refraction gradients can reduce reflection of light over a broad band of wavelengths.

Anti-reflective optical structures for optical systems

In some examples, a method comprises determining, at an electronic device having a first component of a first component type, a unique identifier associated with the first component. In some examples, in accordance with a determination that the unique identifier does not match the expected identifier of the component of the first component type in the electronic device, determining that the first component associated with the unique identifier satisfies one or more eligibility criteria. In some examples, in accordance with the determination that the first component associated with the unique identifier satisfies the one or more eligibility criteria, authenticating an association of the first component with the electronic device, including updating an installation counter associated with the first component, and updating the expected identifier for the component of the first type based on the unique identifier of the first component.

Systems and methods for authenticating components on an electronic device

An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

Horizontal cavity surface-emitting laser (HCSEL) monolithically integrated with a photodetector

Systems and methods for storing and recovering data for a device are described. In one embodiment, factory generated calibration data can be generated, sealed and restored securely even if two sensors in two different devices, such as a first ambient light sensor and a second ambient light sensor have the same sensor identifier. In one embodiment, a device transmits a database key to cause storage or recovery of the calibration data, and the database key includes a sensor identifier and a public cryptographic key of the device.

Factory data storage and recovery

Countertop cooker

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Santa Clara, CA, United States of America

Peter Chang