The Boeing Company

Peter C Cotler

Christopher M Fetzer

Richard Roland King

James H Ermer

A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III-V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.

Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers

A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.

Isoelectronic surfactant induced sublattice disordering in optoelectronic devices

A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III&#x2013;V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.

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Canyon Country, CA, United States of America

Peter C Cotler