Semikron Elektronik Gmbh &co.kg

Other

Semikron Elektronik Gmbh & Co. Kg Patentabteilung

Peter Beckedahl

Ingo Bogen

Jürgen Steger

Sandro Bulovic

Markus Knebel

Juergen Steger

Alexander Wehner

Thomas Stockmeier

Hartmut Kulas

Frank Ebersberger

Harald Kobolla

Heinrich Heilbronner

Reinhard Herzer

Jörg Ammon

Christian Goebl

Bastian Vogler

Ludwig Hager

Andreas Maul

Gunter Königsmann

Karlheinz Augustin

Susanne Kalla

Markus Müller

Ulrich Sagebaum

Jürgen Windischmann

Peter Schott

Rainer Weiss

Ingo Staudt

Rainer Weiß

Ralf Ehler

Josef Faltenbacher

Chrstian Göbl

Ulrich Sagebaum Geb Herrmann

Power module

A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.

Control device for a power semiconductor switch

A submodule and an assembly include a switching device having a substrate, and printed conductors arranged thereupon. The submodule incorporates a first and a second DC voltage printed conductor, to which a first and a second DC voltage terminal element are connected in an electrically conductive manner, and an AC voltage printed conductor, to which an AC voltage terminal element is connected in an electrically conductive manner. The submodule further comprises an insulating moulding, which encloses the switching device in a frame-type arrangement. The first DC voltage terminal element, by means of a first contact section, engages with a first supporting body of the insulating moulding, and the AC voltage terminal element, by means of a second contact section, engages with a second supporting body of the insulating moulding. To this end, a first clamping device is configured to project through a first recess in the first supporting body, in an electrically insulating manner, and to form an electrically-conductive clamping connection between the first DC voltage terminal element and an associated first DC voltage connecting element, and a second clamping device is configured to project through a second recess in the second supporting body, in an electrically insulating manner, and to form an electrically-conductive clamping connection between the AC voltage terminal element and an associated AC voltage connecting element.

Power electronics submodule having DC and AC voltage terminal elements, and assembly hereof

A power electronic arrangement has a power converter module, and a first and a second DC voltage terminal element and a first and a second DC voltage connection element, connected to conductor tracks in an electrically conductive manner with the correct polarity. First and second DC voltage terminal element, and the first and second DC voltage connection element, form a stack with an insulation device therebetween. The first DC voltage terminal element has a first recess enclosed in a first main plane, the second DC voltage connection element has a second recess enclosed and aligned with the first in a third main plane, the second DC voltage terminal element and the first DC voltage connection element are in a second main plane between the first and third main plane, and are laterally spaced from each other proximate the recesses. A clamping device is electrically isolated through the first and second recess and forms an electrically conducting clamped connection between the first DC terminal element and the first DC connection element, and between the second DC terminal element and the second DC connection element.

Power electronic arrangement with DC voltage connection element

A power semiconductor module, and an arrangement using the module. The module has a basic parallelepipedal shape with opposed pairs of main, longitudinal and narrow sides, a cooling device which is capable of carrying a flow of a cooling fluid, having a power electronics switch and a housing. The cooling device has a cooling volume with at least one cooling face and four connection devices which are arranged in pairs on the main sides. In addition, the connection devices carry the cooling fluid and are designed as a flow inflow and a flow outflow and as a return inflow and a return outflow, respectively. The power electronics switch has load input connection devices and load output connection devices which are arranged on one or both longitudinal sides and a control connection device which is arranged on a narrow side of the module.

Modular liquid-cooled power semiconductor module, and arrangement therewith

A power semiconductor module comprising a substrate. The power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are electrically conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common side in relation to the first and second DC voltage load current connection elements. The invention provides a power semiconductor module having a particularly low-inductance construction.

Power semiconductor module

A capacitor system and a method for producing a capacitor system. The capacitor system may be used in a power semiconductor module. In one embodiment, the capacitor system comprises a metal shaped body having a depression; a capacitor arranged at least partly in the depression; a spacer composed of electrically insulating material, the spacer being arranged at least partly between the capacitor and the metal shaped body in the depression; and an electrically insulating potting material provided in the depression, wherein the potting material fixes the capacitor in the depression so that the capacitor does not touch the metal shaped body.

Capacitor system and method for producing a capacitor system

A solar module has a solar cell which generates a DC voltage. The module has a converter for converting a DC voltage fed into its input. The module contains a semiconductor switch and a controller which drives a switching input of the semiconductor switch. The controller drives the semiconductor switch variably so that the semiconductor switch switches more slowly during the transition operation than during normal operation, thereby reducing a dynamic overvoltage on the switch such that the voltage present on the switch does not exceed the blocking voltage of the switch.

Solar module for generating a D.C. voltage and method for its operation

A power semiconductor system and method for producing a power semiconductor system. In one embodiment, the application relates to a power semiconductor system, comprising a line system for a fluid working medium; wall element having an outer side and an inner side; and a power semiconductor circuit arranged at the outer side of the wall element, wherein the inner side of the wall element forms a fluid-tight wall of the line system.

Power semiconductor system

A method for making a power semiconductor module and a module produced by that method, wherein the module includes a substrate, a connection device and load terminal elements, wherein power semiconductor components are arranged on a conductor track of the substrate and connected to one of the load terminal element by the connection device. The power semiconductor module has auxiliary contact pads which can be connected to an external printed circuit board. The primary production step in this case is cohesively connecting respective first contact areas of the first conductor tracks to at least one second contact area of a power semiconductor component and at least one third contact area of a load terminal element; afterwards, the assemblage composed of at least one power semiconductor component of a connection device and load terminal elements is arranged to form a housing of the power semiconductor module.

Method for producing a power semiconductor module, and power semiconductor module comprising a connection device

A power semiconductor module comprises at least one power semiconductor component and a connection device which makes contact with the power semiconductor component. The connection device is composed of a layer assembly having at least one first electrically conductive layer facing the power semiconductor component and forming at least one first conductor track, and an insulating layer following in the layer assembly, and a second layer following further in the layer assembly and forming at least one second conductor track, the second layer being remote from the power semiconductor component. The power semiconductor module has at least one internal connection element, wherein the internal connection element is embodied as a contact spring having a first and a second contact section and a resilient section. The first contact section has a common contact area with a first or a second conductor track of the connection device.

Power semiconductor module comprising a connection device with internal contact spring connection elements

A power semiconductor component having a basic body and at least one contact area. At least one first thin metallic layer of a first material is arranged on the contact area. A second metallic layer&#x2014;thicker than the first&#x2014;of a second material is arranged on the first material by a pressure sintering connection of said material. The associated method has the following steps: producing a plurality of power semiconductor components in a wafer; applying at least one first thin metallic layer on at least one contact area of a respective power semiconductor component; arranging a pasty layer, composed of the second material and a solvent, on at least one of the first metallic layers for each power semiconductor component; pressurizing the pasty layer; and singulating the semiconductor components.

Power semiconductor component with metal contact layer and production method therefor

A power semiconductor module comprising: a substrate, a plurality of conductor tracks arranged thereon, the conductor tracks being electrically insulated from one another, and including power semiconductor components arranged thereon; a connecting device, composed of an alternating layer sequence of at least two electrically conductive layers and at least one electrically insulating layer disposed therebetween, for the circuit-conforming connection of the power semiconductor components, the conductor tracks and/or external contact devices. The electrically conductive layers form connecting tracks and at least one transformer is formed integrally with, and thus from the constituent parts of, the connecting device. The transformer is composed of at least one transmitter coil and at least one receiver coil, which are in each case arranged coaxially with respect to one another and are formed with spiral windings.

Power semiconductor module with control functionality and integrated transformer

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Oberasbach, Germany

Peter Beckedahl