Other

K Systems Corporation

Peter B Kosel

Nestor Kolcio

Richard Lc Wu

Sandra J Fries-Carr

Alexandra C Melnyk

Victor V Kulish

An improved device utilizing an inductive undulative EH-accelerator is proposed for acceleration and cooling of plasma fluxes, and beams of charged particles, and separate charged particles; and for forming of neutral molecular beams, and neutron beams (inductive undulative EH-accelerator) is proposed. The device consists of an electromagnetic undulation system, whose driving system for electromagnets, is made in the form of a radio frequency (RF) oscillator operating in the frequency range from about 100 KHz to 10 GHz; which is connected with coils of the undulatve system of electromagnets, and a source of accelerated particles, which is provided in the form of source of plasma or neutral molecular beams, or positive or negative ions, or charged particle beams, or separate charged particles. Other distinguishing features of the device are that at least a part of the cores and magneto-conductors of the electromagnetic undulation system is made from ferrite-type materials, and that the electromagnetic undulation system is used for purposes of acceleration of separate charged particles, or cooling and acceleration of charged particle beams and plasma fluxes. This is a compact system. The invention is related to such uses for which especially the problem of reducing of overall size, weight and cost of a device and increasing of its reliability is required.

Inductional undulative EH-accelerator

One aspect of the present invention is directed to a capacitor. The capacitor includes a first layer and a second layer. The first layer includes a first electrically conductive substrate having a first surface and a second surface. A first dielectric film is deposited on the first surface of the first substrate and a second dielectric film is deposited on the second surface of the first substrate. The second layer contacts the first layer. The second layer includes a second electrically conductive substrate having a first surface and a second surface. A third dielectric film is deposited on the first surface of the second substrate, and a fourth dielectric film is deposited on the second surface of the second substrate.

Capacitor structures with dielectric coated conductive substrates

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Cincinnati, OH, United States of America

Peter B Kosel