National Technology & Engineering Solutions of Sandia, LLC

Peter Anand Sharma

Ting S Luk

Tzu-Ming Lu

Karla Rosa Reyes

Josh A Whaley

Charles Thomas Harris

A nanoscale bolometer for infrared (IR) thermal imaging comprises a subwavelength antenna that provides a specific detectivity approaching a fundamental, thermodynamic limit. The uncooled nanobolometer achieves performance comparable to cooled, high-performance, semiconductor photodetectors, but with significantly reduced size, weight, power, and cost.

Nanoscale bolometer operating near the thermodynamic limit

An apparatus for making in-situ electrical measurements of a sample while the sample is subjected to a temperature gradient between a first side of the sample and a second side of the sample. The apparatus comprises a first heater and a second heater that are positioned in contact with the first side of the sample and the second side of the sample, respectively. The first heater and the second heater comprise respective faces that each have electrical contacts embedded therein. Electrical measurements pertaining to the sample can be made by way of the electrical contacts embedded in the faces. A temperature at either side of the sample can be monitored by way of thermocouples positioned inside the heaters in proximity to the faces of the heaters.

Apparatus, methods and system for temperature gradient aging with in-situ electrical monitoring

Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.

Topological insulator infrared pseudo-bolometer with polarization sensitivity

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.

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Albuquerque, NM, United States of America

Peter Anand Sharma