Silex Microsystems Ab

Peter Agren

Niklas Svedin

Thorbjörn Ebefors

Edvard Kälvesten

Thomas Ericson

A semiconductor device, includes a semiconductor substrate () having a first () and a second () side. There is provided at least one via () extending through the substrate () having first () and second () end surfaces, the first end surface () constituting a transducer electrode for interacting with a movable element () arranged at the first side () of the substrate (). A shield () is provided on and covers at least part of the first side () of the substrate (), the shield/mask () including a conductive layer () and an insulating material layer () provided between the substrate () and the conductive layer (). The mask has an opening () exposing only a part of the first surface () of the via. Preferably the opening () in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.

Precise definition of transducer electrodes

A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

Via structure and method thereof

A vent hole precursor structure () in an intermediate product for a semi-conductor device has delicate structures (), and said intermediate product has a cavity () with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer () in which there is formed a depression (). The first wafer is bonded to a second wafer () comprising a device layer () from which the structures () are to be made by etching. A hole or groove () having a predefined depth extends downwards into the device layer, such that the cavity () during etching is opened up before the etching procedure breaks through the device layer () to form the structures ().

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Huddinge, Sweden

Peter Agren