Perkinelmer Health Sciences, Inc.

Ade Corporation

Revvity Health Sciences, Inc.

Peter A Harvey

Kevin Groves

Wael I Yared

Roger Bossé

Michael Meltzer

Ilias Faqir

Noel S Poduje

Roy E Mallory

Jaydeep K Sinha

William Drohan

Peter Domenicali

Alexander Belyaev

William Goldfarb

Richard S Smith

Presented herein are methods, systems, and apparatus for single analyte detection or multiplexed analyte detection based on amplified luminescent proximity homogeneous assay ('alpha') technology, but using hollow polymer fiber optics doped with 'acceptor bead' dye (e.g., thioxene, anthracene, rubrene, and/or lanthanide chelates) or ‘donor bead’ dye (e.g., phthalocyanine) that carry a signal generated by the dopant via singlet oxygen channeling.

Hollow polymer fiber optic system for single analyte and multiplexed analyte detection

Presented herein are methods, systems, and apparatus for single analyte detection or multiplexed analyte detection based on amplified luminescent proximity homogeneous assay ('alpha') technology, but using hollow polymer fiber optics doped with 'acceptor bead' dye (e.g., thioxene, anthracene, rubrene, and/or lanthanide chelates) or 'donor bead' dye (e.g., phthalocyanine) that carry a signal generated by the dopant via singlet oxygen channeling.

A method to determine the systematic error of an instrument that measures features of a semiconductor wafer includes the following sequential steps. Collecting sensor data from measurement runs on front and back surfaces of a wafer while the wafer is oriented at different angles to the instrument for each run, yielding a front data set and a back data set for each angle. Then organizing the data in each set into a wafer-fixed coordinate frame. Reflecting all back surface data about a diameter of the wafer creates a reflected back data set. Subtracting the reflected back data from the front data for each wafer angle, and dividing the result by two, yields an averaged wafer shape for each load angle. Adding the reflected back data to the front data and dividing the result by two, yields an instrument signature for each load angle. The symmetric corrector is calculated by taking the average over all instrument signatures at each load angle. The symmetric corrector is successively rotated to the same angle as a front shape measurement and subtracted, yielding a calibrated wafer data set. A wafer mean is computed by averaging these calibrated wafer shape measurements. When the wafer mean is subtracted from the individual front side corrected shape measurements, a set of shape residual maps for each load angle results. The average of the aligned residuals is the asymmetric error. The systematic error is the sum of the symmetric and asymmetric errors.

Wafer shape accuracy using symmetric and asymmetric instrument error signatures

A measurement station which rotates a wafer in a vertical plane and moves a scanning sensor linearly along an axis which is parallel to the wafer rotation plane, thus providing a spiral, or other, scan path across the wafer. The vertical orientation reduces errors from weight induced sagging, especially of large, e.g. 300 mm wafers. The measurement station includes wafer grippers which move in the wafer's plane for securing the wafer in position for rotation. The measurement station also includes master calibration gauges which simplify calibration and obviate the need for calibration test wafers. A technique for reducing vibration and assuring scan repeatability includes coasting of the wafer in rotation and coordinated linear probe motions for scanning. Probe measurement data obtained is digitized early and calibration, demodulation, filtering and other processing is done digitally.

Wafer testing and self-calibration system

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Wilmington, MA, United States of America

Peter A Harvey