International Business Machines Corporation

Peter A Agostino

Ajay Prabhakar Giri

John Ulrich Knickerbocker

Jon Alfred Casey

Charles Hampton Perry

Sarah Huffsmith Knickerbocker

James N Humenik

Lawrence D David

Srinivasa S Reddy

Robert W Nufer

Mark A Takacs

John Acocella

Steven M Kandetzke

Renuka S Divakaruni

George Czornyj

Richard A Bates

Anthony Mastreani

Arnold I Baise

David R Clarke

Daniel P Kirby

Lovell B Wiggins

Salvatore J Scilla

Liang-Choo Hsia

Amy T Matts

Werner E Dunkel

Allen J Dam

Ray M Bryant

Frederick M Pressman

Suryadevara Vijayakumar Babu

Carlton G Willson

Daniel Joseph Dawson

Hiroyuki Hiraoka

Joseph G Hoffarth

John R Lankard

Adolph Herbst

Ron J McDonald

A method of patterning a preimidized benzophenone photoactive polymer used as a photoresist with a laser light source improves its crosslinking efficiency and reduces swelling, thereby enabling the formation of lines on the order of microns.

Laser exposure of photosensitive polyimide for pattern formation

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process for fabricating a low dielectric composite substrate

Reaction products of organosilane compounds or polydiphenylsilazane compounds and a novolac resin having phenolic groups can be used as O.sub.2 RIE barrier materials in semiconductor etching processes. These materials have low O.sub.2 etch rates and can be spun on to form crack-free thick layers. Particular RIE barrier materials contemplated have the general formula: ##STR1## wherein A is a methyl or phenyl group.

Spin on oxygen reactive ion etch barrier

Reaction products of organosilane compounds and a novolac resin having phenolic groups have been found to have a very low rate of etching, thereby enabling the material to also be used as an RIE barrier in semiconductor manufacturing processes. A particular photosensitive material has the following chemical formula: ##STR1##

Photosensitive reactive ion etch barrier

Reaction products of organosilane compounds and a novolac resin having phenolic groups are capable of generating either positive or negative tone patterns depending on the time and temperature of processing. Particular photosensitive materials contemplated have the following chemical formula: ##STR1##

Thermographic reversible photoresist

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Residual catalyst is removed from a dielectric substrate by exposing the substrate to a plasma formed from an inert gas.

Removal of residual catalyst from a dielectric substrate

Growing community of inventors

Canaan, NY, United States of America

Peter A Agostino