Nxp B.v.

Nxp USA, Inc.

Pete Rodriquez

Jiang-kai Zuo

Xin Lin

Ronghua Zhu

Hongning Yang

Zhihong Zhang

Won Gi Min

Yujing Wu

A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.

LDMOS with an improved breakdown performance

A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures has a lower resistance in a saturation region of operation than each transistor structure of the second plurality of transistor structures.

Composite semiconductor device with different channel widths

Growing community of inventors

Phoenix, AZ, United States of America

Pete Rodriquez