Texas Instruments Corporation

Pertti K Ikalainen

Larry Charles Witkowski

In one form of the invention, a field effect transistor is disclosed, the transistor comprising: a channel between a source and a drain, the channel comprising: a first region 22 of a first semiconductor material having a first doping concentration; a second region 20 of a second semiconductor material having a second doping concentration, the second region 20 lying above the first region 22; a third region 18 of the first semiconductor material having a third doping concentration, the third region lying above the second region 20, wherein the first doping concentration is higher than the second and third doping concentrations; and a gate electrode 12 lying above the third region 18, whereby an electrical current flows in the channel primarily in the first region 22 or primarily in the second region 20 by varying a voltage on the gate electrode 12.

Method for forming a linear field effect transistor

In one form of the invention, an amplifier is disclosed, the amplifier comprising: an input transmission line 32; an output transmission line 36,38; at least two active devices 134 distributed between the two transmission lines; a termination 50 connected to an end of the input transmission line 32, the termination 50 comprising a terminating transistor 52 having a first gate terminal 150, a drain terminal 151, and a source terminal 152. wherein the first gate terminal 150 is connected to the input transmission line 32 and the drain terminal 151 is coupled to the first gate terminal 150 through a resistor 58 and a capacitor 56. The termination 50 is preferably characterized by a noise temperature of less than 300.degree. K.

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Allen, TX, United States of America

Pertti K Ikalainen