Speedfam-ipec Corporation

Novellus Systems Incorporated

Speedfam Corporation

Periya Gopalan

Chris E Karlsrud

Jon R MacErnie

Robert F Allen

Ismail Emesh

Jose R Gonzalez-Martin

Arthur Hamer

Toby Jordan

Craig M Howard

Jeff Cunnane

Bill Thornton

Fernando Calderon

Anand Gupta

Daniel R Trojan

Phillip M Rayer, Ii

Bentley J Palmer

Clinton O Fruitman

Andrew M Yednak, Iii

Mark A Meloni

Xingbo Yang

Yakov Epshteyn

Jeffrey B Cunnane

Guangshum Chen

An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.

Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface

The invention relates generally to a system and method for improved cleaning of workpieces and workpiece cleaning tools. More specifically, the invention provides systems and methods for cleaning workpieces and sponges by manipulating the surface charge of one or more sponges by exposing them to various cleaning fluids. In one embodiment, sponges such as PVA sponges, having either positive, negative or neutral charges, are used to clean surfaces of workpieces such as semiconductor wafers. While cleaning a workpiece, a sponge may be exposed to a workpiece cleaning fluid, which may or may not alter the surface charge of the sponge. After cleaning the workpiece, the sponge may be exposed to a sponge cleaning fluid, which may or may not alter the surface charge of the sponge. Manipulating the surface charge of a sponge during and/or after cleaning of a workpiece may enhance cleaning of the workpiece, by attracting oppositely charged particles and/or repelling similarly charged particles from the workpiece surface. Manipulating the surface charge of a sponge may also enhance cleaning of the sponge, by reducing or eliminating the attractive forces between the surface of the sponge and the charged particles attached to it.

System and method for cleaning workpieces

The present invention is an apparatus and method for manufacturing a window into a polishing pad used during a planarization process of a front surface of a wafer. A hole is created in the polishing pad at a location where a window is desired. A first release film may be pressed against the working surface of the polishing pad thereby covering one end of the hole. Window material of suitable mechanical, chemical and optical properties is cast in the hole. A second release film may also be pressed against the bottom surface of the polishing pad covering the other end of the hole. The window material is preferably cured with light to quickly form and bond the window into the hole. The release films may be removed leaving the cast window in the polishing pad.

Polishing pad window for a chemical mechanical polishing tool

Apparatus and method for cleaning, rinsing and drying work pieces such as semiconductor wafers. The apparatus can be combined, in an integrated apparatus, with a CMP machine. The apparatus includes one or more brush boxes with water tracks to convey work pieces to and from the brush boxes. Each brush box and its associated water track provide for the containment of cleaning agents such as HF used in the cleaning process so that different cleaning agents used in different brush boxes are kept segregated. The efficiency of the brush box is enhanced by providing for movement of work pieces back and forth through the brush box. Thus work pieces can make more than one pass through a brush box.

Wafer cleaning apparatus and associated wafer processing methods

An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Mapping system for semiconductor wafer cassettes

Combined CMP and wafer cleaning apparatus and associated methods

Integral machine for polishing, cleaning, rinsing and drying workpieces

The present invention provides an apparatus for cleaning semiconductor workpieces following a Chemical Mechanical Planarization ('CMP') procedure. Initially, a workpiece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the workpiece. Next, the workpiece is transported into a chemical-etch cleaning station wherein the workpiece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The workpiece then is immersed in a cleaning solution which is moved around the various surfaces of the workpiece. The workpiece is immersed in the cleaning solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the workpiece.

Post-CMP wet-HF cleaning station

The present invention provides a method for cleaning semiconductor work pieces following a Chemical Mechanical Planarization ('CMP') procedure. Initially, a work piece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the work piece. Next, the work piece is transported into a HF cleaning station wherein the work piece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The work piece then is immersed in a hydrogen fluoride ('HF') solution which is circulated around the various surfaces of the work piece. The work piece is immersed in the HF solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the work piece.

Growing community of inventors

Chandler, AZ, United States of America

Periya Gopalan