Centre National De La Recherche Scientifique

Ecole Polytechnique

Commissariat a L'energie Atomique

Electricite De France

Totalenergies Se

Institut Photovoltaique D'ile De France (ipvf)

Père Roca I Cabaroccas

Wanghua Chen

Pierre-Jean Alet

Romain Cariou

The invention relates to a process for the preparation of a semiconductor material comprising at least one entirely monocrystalline semiconductor layer, said process comprising the steps of preparation of the surface of a first substrate to receive a monocrystalline silicon layer; deposition by Plasma-Enhanced Chemical Vapor Deposition (PECVD) of a layer of monocrystalline silicon by epitaxial growth with a growth rate gradient on the silicon layer monocrystalline obtained in step (i); and epitaxial growth of a monocrystalline layer of a semiconductor material on the monocrystalline silicon layer obtained in step (ii), to thus obtain a material comprising at least one entirely monocrystalline semiconductor layer. The invention also relates to a multilayer material comprising a monocrystalline layer of semiconductor material.

Process for manufacturing transferable thin layer

A method for producing nanostructures on a metal oxide substrate includes the following steps: a) forming metal aggregates on the metal oxide substrate; and b) vapor phase growing nanostructures on the metal oxide substrate covered with metal aggregates, the substrate being heated in the presence of one or more precursor gases, and the vapor phase growth of nanostructures being catalyzed by the metal aggregates. The metal aggregate formation stage a) includes an operation for reducing the surface of the metal oxide substrate by reductive plasma treatment, causing droplets of metal aggregates to form on the substrate, the metal aggregate formation stage a) and the nanostructure growth stage b) being carried out in series in a single shared plasma reactor chamber, the nanostructure growth being directly carried out on the droplets of metal aggregates.

Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device

Growing community of inventors

Villebon sur Yvette, France

Père Roca I Cabaroccas