Anhui Sanyuan Intelligent Technology Co., Ltd.

University of Science and Technology of China

Hefei Institutes of Physical Science, Cas

Pengfei Wang

Jiangfeng Du

Fazhan Shi

Jing Lu

Xiangyu Ye

Liuwei Xu

Ya Wang

Hangyu Liu

Zhiwei Mao

Haoyu Sun

Jun Li

Pei Yu

Huafeng Mao

Mengqi Wang

Yanan Wu

Yunxiang Tian

An impedance matching method for a CLC branch of a low-frequency resonance suppression device is provided, which includes: establishing an equivalent circuit model for a power supply system with a low-frequency resonance suppression device joined in; obtaining, according to a target low-frequency harmonic frequency band and the equivalent circuit model, a constraint required by the power supply system for suppressing low-frequency harmonics; constructing an objective function based on a low-frequency harmonic suppression rate in a bus of the power supply system; obtaining a multi-constraint objective optimization function of CLC branch impedance based on the constraint and the objective function; and solving the multi-constraint objective optimization function through an improved harmony search algorithm to obtain an impedance parameter of the CLC branch. The present disclosure can ensure a low-frequency harmonic suppression effect for the power supply system.

Impedance matching method for CLC branch of low-frequency resonance suppression device

The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming a sacrificial layer and a photoresist layer on a surface of a crystal substrate; S2, performing a lithography on the photoresist layer to form a mask hole according to a micro-nano pattern; S3, performing an isotropic etching on the sacrificial layer through the mask hole, and amplifying the micro-nano pattern to the sacrificial layer; S4, performing an ion implantation doping on an exposed crystal surface below the mask hole; S5, removing the photoresist layer, and depositing a mask material; S6, removing the sacrificial layer, and transferring a micro-nano amplified pattern in the sacrificial layer to a mask material pattern; and S7, etching an exposed crystal surface, and removing the mask material on the surface and forming a specific defect by annealing.

Fixed-position defect doping method for micro-nanostructure, and NV center sensor

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